Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure

被引：3

作者：

Zhang, Y. ^{[1
]}

Mi, W. B. ^{[1
]}

Zhang, X. X. ^{[2
]}

机构：

[1] Tianjin Univ, Fac Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparat Te, Tianjin 300072, Peoples R China

[2] KAUST, PSE Div, Thuwal 239556900, Saudi Arabia

来源：

EPL | 2016年 / 114卷 / 06期

基金：

中国国家自然科学基金;

关键词：

SILICON; SPINTRONICS; ELECTRONS; BREAKDOWN; JUNCTION; FUTURE; DIODE; FILMS;

D O I：

10.1209/0295-5075/114/67003

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of similar to 2300% appears at 200K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. Copyright (C) EPLA, 2016

引用

页数：6

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