Effect of deposition temperature on ultra-low voltage resistive switching behavior of Fe-doped SrTiO3 films

被引：6

作者：

Jiang, Xue ^{[1
]}

Wei, Minglong ^{[1
]}

Chan, Cheuk Ho ^{[2
]}

Wang, Yingyue ^{[1
]}

Lai, Ruilian ^{[1
]}

Wang, Jianbo ^{[1
]}

Dai, Jiyan ^{[2
]}

Qiu, Xiaoyan ^{[1
]}

机构：

[1] Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China

[2] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2020年 / 116卷 / 10期

基金：

中国国家自然科学基金;

关键词：

THIN-FILMS; OXIDE; MECHANISMS; SURFACE;

D O I：

10.1063/1.5123254

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of deposition temperature on the microstructures and resistive switching properties of Fe-doped SrTiO3 (Fe-STO) films deposited via magnetron sputtering has been investigated. The as-deposited Fe-STO films change from amorphous to polycrystalline when the deposition temperature increases to 600 degrees C, but 800 degrees C-deposited Fe-STO films exhibit cracked surface morphologies with Sr-rich nanosheet segregation. Fe-STO films deposited at <= 600 degrees C exhibit reversible bipolar resistive switching behaviors with ultra-low switching voltages of <+/- 0.6V, while 450 degrees C-deposited Fe-STO films retain an ON/OFF resistance ratio of similar to 10(5) after more than 2500 endurance cycles and 600 degrees C-deposited Fe-STO films exhibit three different resistive switching patterns in sequence. Fe-assisted oxygen-vacancy conductive filaments are responsible for the ultra-low voltage resistive switching behaviors of Fe-STO films.

引用

页数：5

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