Roles of silver oxide in the bipolar resistance switching devices with silver electrode

被引：45
作者：
Dong, C. Y. [1 ,2 ,3 ]
Shang, D. S. [1 ,2 ]
Shi, L. [1 ,2 ]
Sun, J. R. [1 ,2 ]
Shen, B. G. [1 ,2 ]
Zhuge, F. [4 ]
Li, R. W. [4 ]
Chen, W. [3 ]
机构：
[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[3] Hebei Normal Univ, Dept Phys, Shijiazhuang 050016, Peoples R China
[4] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 07期
基金：
中国国家自然科学基金;
关键词：
THIN-FILMS; OXYGEN; TRANSITION; INTERFACE; GROWTH; LAYERS;
D O I：
10.1063/1.3556618
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Three devices, Ag/WO3-x/Pt, Ag/AgOx/Pt, and Ag/AgOx/WO3-x/Pt, were investigated to elucidate the influence of the silver oxide on the bipolar resistive switching behavior. The silver oxide films were obtained by depositing silver at oxygen atmosphere. We find that the resistive switching behavior was determined by the silver oxide layer. Bulk and interface resistive switching were observed in the Ag/AgOx/Pt and Ag/AgOx/WO3-x/Pt devices, respectively. By the micro-x-ray photoemission spectroscopy analysis, it was demonstrated that the electrochemical redox reaction occurred in the AgOx layer is responsible for the resistive switching behavior at silver/oxide interface. (C) 2011 American Institute of Physics. [doi:10.1063/1.3556618]
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页数：3
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