Enhanced Photoluminescence Intensity of Silicon-Germanium Nanoparticles: Silica Thin Films by Annealing in Forming Gas

被引：2

作者：

Zhong, Kun ^{[1
]}

Su, Jing ^{[1
]}

机构：

[1] Nanjing Univ Informat Sci & Technol, Sch Phys & Optoelect Engn, Nanjing 210044, Jiangsu, Peoples R China

来源：

SPECTROSCOPY LETTERS | 2015年 / 48卷 / 08期

关键词：

ion implantation; photoluminescence; silicon-germanium nanoparticles; SI NANOCRYSTALS; MATRIX;

D O I：

10.1080/00387010.2014.923466

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

Silicon-germanium nanoparticles are prepared by ion implantation and annealing method. Further annealing treatment is carried out in forming gas to passivate nonradiative defects around nanoparticles. Time-resolved photoluminescence measurements were examined to reveal the local environment surrounding the nanoparticles. With the increase in oxygen gas content, photoluminescence intensity from specimen is enhanced by approximate to 5 times and its decay time decreases from 23.2 to 1.6 mu s. Oxygen gas is considered to be an effective passivating gas for this kind of specimen.

引用

页码：553 / 555

页数：3

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