Spontaneous Formation of Fractal Aggregates of Au Nanoparticles in Epoxy-Siloxane Films and Their Application as Substrates for NIR Surface Enhanced Raman Spectroscopy
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作者:
Basker, Dinesh K.
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McMaster Univ, Dept Chem & Chem Biol, 1280 Main St West, Hamilton, ON L8S 4M1, CanadaMcMaster Univ, Dept Chem & Chem Biol, 1280 Main St West, Hamilton, ON L8S 4M1, Canada
Basker, Dinesh K.
[1
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Saravanamuttu, Kalaichelvi
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McMaster Univ, Dept Chem & Chem Biol, 1280 Main St West, Hamilton, ON L8S 4M1, CanadaMcMaster Univ, Dept Chem & Chem Biol, 1280 Main St West, Hamilton, ON L8S 4M1, Canada
Saravanamuttu, Kalaichelvi
[1
]
机构:
[1] McMaster Univ, Dept Chem & Chem Biol, 1280 Main St West, Hamilton, ON L8S 4M1, Canada
We present a facile, inexpensive route to free-standing, thermo-mechanically robust and flexible epoxy-siloxane substrates embedded with fractal aggregates of Au nanoparticles, and demonstrate their efficiency as substrates for surface enhanced Raman spectroscopy (SERS) at NIR wavelengths. The metallodielectric films are prepared by generating Au nanoparticles through the in-situ reduction of gold (III) chloride trihydrate in epoxypropoxypropyl terminated polydimethyl siloxane (EDMS). The metal nanoparticles spontaneously aggregate into fractal structures in the colloid, which could then be drop-cast onto a substrate. Subsequent UV-initiated cationic polymerization of epoxide moieties in EDMS transforms the fluid colloid into a thin, free-standing film, which contains a dense distribution of fractal aggregates of Au nanoparticles. We used electron and optical microscopy as well as UV-Vis-NIR spectrometry to monitor the evolution of nanoparticles and to optically and structurally characterize the resulting films. Raman spectroscopy of the chromophore Eosin Y adsorbed onto the metallodielectric films showed that they are excellent SERS substrates at NIR excitation with an enhancement factor of similar to 9.3 x 10(3).
机构:
Inha Univ, Inha Res Inst Aerosp Med, Incheon 22212, South Korea
Inha Univ, Ctr Sensor Syst, Incheon 22212, South KoreaInha Univ, Inha Res Inst Aerosp Med, Incheon 22212, South Korea
Lee, Dong-Jin
Kim, Dae Yu
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Inha Univ, Inha Res Inst Aerosp Med, Incheon 22212, South Korea
Inha Univ, Ctr Sensor Syst, Incheon 22212, South Korea
Inha Univ, Coll Engn, Dept Elect Engn, Incheon 22212, South KoreaInha Univ, Inha Res Inst Aerosp Med, Incheon 22212, South Korea
机构:
Georg August Univ Gottingen, Phys Inst 1, Friedrich Hund Pl 1, D-37077 Gottingen, GermanyGeorg August Univ Gottingen, Phys Inst 1, Friedrich Hund Pl 1, D-37077 Gottingen, Germany
Merten, S.
Roddatis, V
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Georg August Univ Gottingen, Inst Mat Phys, Friedrich Hund Pl 1, D-37077 Gottingen, GermanyGeorg August Univ Gottingen, Phys Inst 1, Friedrich Hund Pl 1, D-37077 Gottingen, Germany
Roddatis, V
Moshnyaga, V
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Georg August Univ Gottingen, Phys Inst 1, Friedrich Hund Pl 1, D-37077 Gottingen, GermanyGeorg August Univ Gottingen, Phys Inst 1, Friedrich Hund Pl 1, D-37077 Gottingen, Germany
机构:
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Mech Engn, W Lafayette, IN 47907 USAPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Rout, Chandra Sekhar
Kumar, Anurag
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Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Mech Engn, W Lafayette, IN 47907 USAPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Kumar, Anurag
Xiong, Guoping
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Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Mech Engn, W Lafayette, IN 47907 USAPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Xiong, Guoping
Irudayaraj, Joseph
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Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Mech Engn, W Lafayette, IN 47907 USA
Purdue Univ, Bindley Biosci Ctr, W Lafayette, IN 47907 USAPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Irudayaraj, Joseph
Fisher, Timothy S.
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Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Mech Engn, W Lafayette, IN 47907 USAPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
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Institute of Optoelectronics, Military University of Technology, 2 gen. Sylwestra Kaliskiego Street, WarsawInstitute of Optoelectronics, Military University of Technology, 2 gen. Sylwestra Kaliskiego Street, Warsaw
Liszewska M.
Budner B.
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Institute of Optoelectronics, Military University of Technology, 2 gen. Sylwestra Kaliskiego Street, WarsawInstitute of Optoelectronics, Military University of Technology, 2 gen. Sylwestra Kaliskiego Street, Warsaw
Budner B.
Norek M.
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Faculty of Advanced Technologies and Chemistry, Military University of Technology, 2 gen. Sylwestra Kaliskiego Street, WarsawInstitute of Optoelectronics, Military University of Technology, 2 gen. Sylwestra Kaliskiego Street, Warsaw
Norek M.
Jankiewicz B.J.
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Institute of Optoelectronics, Military University of Technology, 2 gen. Sylwestra Kaliskiego Street, WarsawInstitute of Optoelectronics, Military University of Technology, 2 gen. Sylwestra Kaliskiego Street, Warsaw
Jankiewicz B.J.
Nyga P.
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Institute of Optoelectronics, Military University of Technology, 2 gen. Sylwestra Kaliskiego Street, WarsawInstitute of Optoelectronics, Military University of Technology, 2 gen. Sylwestra Kaliskiego Street, Warsaw
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SUNY Buffalo State Univ, Dept Chem, Buffalo, NY 14222 USA
Univ Buffalo, Dept Chem, Buffalo, NY 14260 USASUNY Buffalo State Univ, Dept Chem, Buffalo, NY 14222 USA
Hoyt, Kristopher W.
Block, Ashleigh C.
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SUNY Buffalo State Univ, Dept Chem, Buffalo, NY 14222 USASUNY Buffalo State Univ, Dept Chem, Buffalo, NY 14222 USA
Block, Ashleigh C.
Tung, Jillian
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SUNY Buffalo State Univ, Dept Chem, Buffalo, NY 14222 USASUNY Buffalo State Univ, Dept Chem, Buffalo, NY 14222 USA
Tung, Jillian
Goodman, M. Scott
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SUNY Buffalo State Univ, Dept Chem, Buffalo, NY 14222 USASUNY Buffalo State Univ, Dept Chem, Buffalo, NY 14222 USA
Goodman, M. Scott
Lednev, Igor K.
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SUNY Albany, Dept Chem, Albany, NY 12222 USASUNY Buffalo State Univ, Dept Chem, Buffalo, NY 14222 USA
Lednev, Igor K.
Heo, Jinseok
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SUNY Buffalo State Univ, Dept Chem, Buffalo, NY 14222 USASUNY Buffalo State Univ, Dept Chem, Buffalo, NY 14222 USA