Graphene-based fast electronics and optoelectronics

被引：0

作者：

Avouris, Ph ^{[1
]}

Lin, Y-M. ^{[1
]}

Xia, F. ^{[1
]}

Farmer, D. B. ^{[1
]}

Wu, Y. ^{[1
]}

Mueller, T. ^{[1
]}

Jenkins, K. ^{[1
]}

Dimitrakopoulos, C. ^{[1
]}

Grill, A. ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST | 2010年

关键词：

TRANSISTORS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present experimental results on high frequency field-effect transistors and fast photodetectors utilizing wafer-scale graphene grown epitaxially from silicon carbide.

引用

页数：4

共 19 条

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