Failure analysis of power transistors

被引：0

作者：

Poech, MH ^{[1
]}

Prochota, D ^{[1
]}

机构：

[1] Fraunhofer Inst Silziumtechnol, Itzehoe, Germany

来源：

PRAKTISCHE METALLOGRAPHIE-PRACTICAL METALLOGRAPHY | 1998年 / 35卷 / 08期

关键词：

D O I：

暂无

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

This article illustrates a number of types of degradation and material damage found in the microstructures of the component parts of power transistors. The various types of damage are clarified with reference to the results of metallographical investigations which clearly trace the microstructural changes and damage sustained back to causes such as current or voltage overload, or temperature cycling in service,The thermomechanical fatigue processes presented show that semiconductor components are subject to damage by long term material degradation.

引用

页码：438 / 447

页数：12

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