Failure analysis of power transistors

被引：0

作者：

Poech, MH ^{[1
]}

Prochota, D ^{[1
]}

机构：

[1] Fraunhofer Inst Silziumtechnol, Itzehoe, Germany

来源：

PRAKTISCHE METALLOGRAPHIE-PRACTICAL METALLOGRAPHY | 1998年 / 35卷 / 08期

关键词：

D O I：

暂无

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

This article illustrates a number of types of degradation and material damage found in the microstructures of the component parts of power transistors. The various types of damage are clarified with reference to the results of metallographical investigations which clearly trace the microstructural changes and damage sustained back to causes such as current or voltage overload, or temperature cycling in service,The thermomechanical fatigue processes presented show that semiconductor components are subject to damage by long term material degradation.

引用

页码：438 / 447

页数：12

共 50 条

[1] FAILURE ANALYSIS OF RF POWER TRANSISTORS
DOZIER, AW
SOLID STATE TECHNOLOGY, 1979, 22 (09) : 85 - 88
[2] Study of Failure Analysis of Power Transistors
Huang Jiaoying
Hu Sicong
Gao Cheng
Wang Xiangfen
PROCEEDINGS OF THE 4TH INTERNATIONAL CONFERENCE ON MECHATRONICS, MATERIALS, CHEMISTRY AND COMPUTER ENGINEERING 2015 (ICMMCCE 2015), 2015, 39 : 2557 - 2562
[3] FAILURE MECHANISMS IN PULSED RF POWER TRANSISTORS
SOUKUP, RJ
COLLINGWOOD, LA
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, : 174 - 181
[4] Peculiar failure mechanisms in GaN power transistors
Vanzi, M.
Mura, G.
MICROELECTRONICS RELIABILITY, 2020, 114 (114)
[5] Simulation-to-Reality based Transfer Learning for the Failure Analysis of SiC Power Transistors
Kamm, Simon
Bickelhaupt, Sandra
Sharma, Kanuj
Jazdi, Nasser
Kallfass, Ingmar
Weyrich, Michael
2022 IEEE 27TH INTERNATIONAL CONFERENCE ON EMERGING TECHNOLOGIES AND FACTORY AUTOMATION (ETFA), 2022,
[6] Hybrid Modelling for the Failure Analysis of SiC Power Transistors on Time-Domain Reflectometry Data
Kamm, Simon
Sharma, Kanuj
Kallfass, Ingmar
Jazdi, Nasser
Weyrich, Michael
2021 IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2021,
[7] Theoretical analysis of XtreMOS™ power transistors
Roig, J.
Desoete, B.
Moens, P.
Tack, A.
ESSDERC 2007: PROCEEDINGS OF THE 37TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2007, : 422 - 425
[8] Failure mechanisms in AlGaAs/GaAs power heterojunction bipolar transistors
Liu, W
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (02) : 220 - 227
[9] Intrinsic Failure Mechanisms in GaN-on-Si Power Transistors
Lidow, Alex
Strittmatter, Robert
Zhang, Shengke
Pozo, Alejandro
IEEE POWER ELECTRONICS MAGAZINE, 2020, 7 (04): : 28 - 35
[10] Failure Analysis on the Abnormal Leakage of the Transistors at Lower Temperatures
Sun, Jiajia
Wang, Xu
Meng, Meng
Qu, Ruoyuan
2018 3RD IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM), 2018, : 21 - 24

← 1 2 3 4 5 →