Elucidating the reaction and diffusion network of oxygen interstitial atoms near a TiO2(110) surface

被引:4
|
作者
Gilliard-Abdulaziz, Kandis Leslie [1 ]
Seebauer, Edmund G. [1 ]
机构
[1] Univ Illinois, Dept Chem & Biomol Engn, Urbana, IL 61801 USA
基金
美国国家科学基金会;
关键词
TiO2; Semiconductor surface; Defects; Diffusion; Oxygen; Sulfur; TIO2; THIN-FILMS; ANATASE; ACTIVATION; INJECTION; CHEMISTRY; DEFECTS; PT/TIO2;
D O I
10.1016/j.apsusc.2018.11.123
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The kinetics and diffusion mechanism of surface-injected oxygen interstitials (O-i) in TiO2(1 1 0) were investigated using a microkinetics model in order to determine the effects of different conditions upon to the O-i reaction-diffusion network. Extended defects, whether incipient or pre-existing, may act as a source or sink for O-i. The present work uses a quantitative microkinetic model to describe this diffusion and reaction network based upon isotopic gas-solid exchange experiments. Pertinent outputs from the model determined that the activation barrier for surface injection of O-i is 2.4 eV, while dissolution of O-i from extended defect is 3.3 eV. The interstitial sequestration mechanism through extended defects leads to kinetic coupling effects that other sequestration mechanisms would not typically induce.
引用
收藏
页码:854 / 860
页数:7
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