Ultra-Low Threshold and Temperature-Stable InGaN Blue and Green Laser Diodes

被引：8

作者：

Castiglia, Antonino ^{[1
]}

Malinverni, Marco ^{[1
]}

Rossetti, Marco ^{[1
]}

Duelk, Marcus ^{[1
]}

Velez, Christian ^{[1
]}

机构：

[1] EXALOS AG, CH-8952 Schlieren, Switzerland

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2021年 / 33卷 / 22期

关键词：

Lasers; Power demand; Thermal stability; Standards; Vertical cavity surface emitting lasers; Chip scale packaging; Threshold current; Blue lasers; green lasers; (In; Al)GaN; laser diode (LD); low threshold; low power consumption; augmented reality;

D O I：

10.1109/LPT.2021.3115603

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on AlInGaN-based blue and green edge-emitting lasers designed for low-current operation and low power consumption. By properly optimizing cavity length and mirror coatings, threshold currents below 5 mA are achieved on single-mode blue laser diodes (LDs) emitting at 460 nm. For output power levels below 10 mW, the LDs with an optimized chip design exhibit a decreased power consumption and an increased power stability against temperature variations compared to LDs with a standard chip design. Extended to green emitters, the new design results in single-mode LDs emitting at 515 nm with threshold currents close to 15 mA.

引用

页码：1235 / 1237

页数：3

共 12 条

[1] Temperature Dependence of Blue InGaN Lasers [J].

Brueninghoff, Stefanie ;

Tautz, Soenke ;

Sabathil, Matthias ;

Queren, Desiree ;

Lutgen, Stephan ;

Strauss, Uwe .

GALLIUM NITRIDE MATERIALS AND DEVICES IV, 2009, 7216

[2] Recent progress on GaN-based superluminescent light-emitting diodes in the visible range [J].

Castiglia, A. ;

Rossetti, M. ;

Malinverni, M. ;

Mounir, C. ;

Matuschek, N. ;

Duelk, M. ;

Velez, C. .

GALLIUM NITRIDE MATERIALS AND DEVICES XIII, 2018, 10532

[3] Visible GaN laser diodes: From lowest thresholds to highest power levels [J].

Koenig, Harald ;

Ali, Muhammad ;

Bergbauer, Werner ;

Brueckner, John ;

Bruederl, Georg ;

Eichler, Christoph ;

Gerhard, Sven ;

Heine, Urs ;

Lell, Alfred ;

Naehle, Lars ;

Peter, Matthias ;

Ristic, Jelena ;

Rossbach, Georg ;

Somers, Andre ;

Stojetz, Bernhard ;

Tautz, Soenke ;

Wagner, Jan ;

Wurm, Teresa ;

Strauss, Uwe ;

Baumann, Markus ;

Balck, Anne ;

Krause, Volker .

NOVEL IN-PLANE SEMICONDUCTOR LASERS XVIII, 2019, 10939

[4] High-power and wide wavelength range GaN-based laser diodes [J].

Kozaki, Tokuya ;

Matsumura, Hiroaki ;

Sugimoto, Yasunobu ;

Nagahama, Shin-ichi ;

Mukai, Takashi .

NOVEL IN-PLANE SEMICONDUCTOR LASERS V, 2006, 6133

[5] High-power AlInGaN-based violet laser diodes with InGaN optical confinement layers [J].

Lee, Sung-Nam ;

Son, J. K. ;

Paek, H. S. ;

Sung, Y. J. ;

Kim, K. S. ;

Kim, H. K. ;

Kim, H. ;

Sakong, T. ;

Park, Y. ;

Ha, K. H. ;

Nam, O. H. .

APPLIED PHYSICS LETTERS, 2008, 93 (09)

[6] 510-515 nm InGaN-Based Green Laser Diodes on c-Plane GaN Substrate [J].

Miyoshi, Takashi ;

Masui, Shingo ;

Okada, Takeshi ;

Yanamoto, Tomoya ;

Kozaki, Tokuya ;

Nagahama, Shin-ichi ;

Mukai, Takashi .

APPLIED PHYSICS EXPRESS, 2009, 2 (06)

[7] InGaN-based multi-quantum-well-structure laser diodes [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (1B) :L74-L76

[8]

Primerov N., 2021, P SPIE, V11788

[9] The virtual retinal display: A new display technology using scanned laser light [J].

Pryor, HL ;

Furness, TA ;

Viirre, E .

PROCEEDINGS OF THE HUMAN FACTORS AND ERGONOMICS SOCIETY 42ND ANNUAL MEETING, VOLS 1 AND 2, 1998, :1570-1574

[10]

Rossetti Marco, 2018, SID Symposium Digest of Technical Papers, V49, P17, DOI 10.1002/sdtp.12480

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