Optical and microscopic properties of In0.5Ga0.5As/GaAs highly strained heterostructures

被引：0
|
作者：
Polimeni, A [1 ]
Henini, M [1 ]
Eaves, L [1 ]
Stoddart, ST [1 ]
Main, PC [1 ]
Hayden, RK [1 ]
Uchida, K [1 ]
Miura, N [1 ]
机构：
[1] Univ Nottingham, Dept Phys, Nottingham NG7 2RD, England
来源：
1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 1998年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The evolution of the optical and microscopic properties of highly strained In0.5Ga0.5As/GaAs heterostructures is studied as a function of the (InGa)As layer thickness, L, for different GaAs substrate orientations, (100) and (311). Optical and microscopic properties have been investigated by means of low temperature photoluminescence (PL) and atomic force microscopy (AFM), respectively. Samples grown on (100) show a clear transition in their photoluminescence (PL) spectra at a critical value of L due to the self-assembling of quantum dots. On the other hand, the same structures grown on (311) show a quite smooth evolution of the PL with L. The microscopic measurements indicate that these differences are associated with the morphology of dots formed on the (311) substrates. A study of the (311) heterostructure photoluminescence as a function of applied magnetic field is also reported.
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页码：519 / 523
页数：5
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