From normal-mode coupling to lasing: Photoluminescence from a semiconductor microcavity

被引：0

作者：

Gibbs, HM ^{[1
]}

Ell, C ^{[1
]}

Khitrova, G ^{[1
]}

Wick, DV ^{[1
]}

Berger, JD ^{[1
]}

Nelson, TR ^{[1
]}

Kira, M ^{[1
]}

Jahnke, F ^{[1
]}

Koch, SW ^{[1
]}

机构：

[1] Univ Arizona, Ctr Opt Sci, Tucson, AZ 85721 USA

来源：

PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VI, PTS 1 AND 2 | 1998年 / 3283卷

关键词：

microcavity; photoluminescence; normal-mode-coupling; lasing;

D O I：

10.1117/12.316667

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The threshold-like growth of the higher energy photoluminescence from a normal-mode-coupling microcavity was previously attributed to exciton polariton lasing (boser) based on Bose condensation into the upper polariton branch Experimental evidence is presented here showing that this boser crossover occurs just as normal-mode coupling collapses to the perturbative weak coupling, so that boser action is fermionic after all. I.e., it can be understood as electron-hole recombination within a microcavity with density-dependent emission properties.

引用

页码：14 / 18

页数：3

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