Strain and composition dependence of the E1(TO) mode in hexagonal Al1-xInxN thin films

被引：21

作者：

Kasic, A ^{[1
]}

Schubert, M

Off, J

Scholz, F

机构：

[1] Univ Leipzig, Fak Phys & Geowissensch, D-04103 Leipzig, Germany

[2] Univ Nebraska, Ctr Microelect & Opt Mat Res, Lincoln, NE 68588 USA

[3] Univ Stuttgart, Inst Phys 4, D-70569 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 11期

关键词：

D O I：

10.1063/1.1355010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Infrared spectroscopic ellipsometry is used to study the influence of strain and composition on the transverse-optical phonon mode of E-1 symmetry in hexagonal Al1-xInxN films for 0.12 less than or equal tox less than or equal to0.21. The 0.1-0.2-mum thick films were grown on slightly compressively strained hexagonal GaN buffer layers, or directly on [0001] sapphire by metalorganic vapor phase epitaxy. The Al1-xInxN E-1(TO) phonon shows a one-mode behavior in contrast to recent theoretical predictions [H. Grille, C. Schnittler, and F. Bechstedt, Phys. Rev. B 61, 6091 (2000)]. Films grown on GaN reveal the influence of strain on the phonon mode frequencies due to pseudomorphic film growth. Al1-xInxN deposited directly on sapphire possesses phonon modes which indicate fully relaxed film growth. (C) 2001 American Institute of Physics.

引用

页码：1526 / 1528

页数：3

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