Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films grown by MOCVD

被引：6
作者：
Baumann, PK
Streiffer, SK
Bai, GR
Ghosh, K
Auciello, O
Thompson, C
Stemmer, S
Rao, RA
Eom, CB
Xu, F
Trolier-McKinstry, S
Kim, DJ
Maria, JP
Kingon, AI
机构：
[1] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
[2] No Illinois Univ, Dept Phys, De Kalb, IL 60115 USA
[3] Rice Univ, Dept Mech Eng & Mat Sci, Houston, TX 77005 USA
[4] Duke Univ, Dept Mech Engn & Mat Sci, Durham, NC 27706 USA
[5] Penn State Univ, Mat Res Lab, University Pk, PA 16802 USA
[6] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
来源：
INTEGRATED FERROELECTRICS | 2001年 / 35卷 / 1-4期
关键词：
PMN-PT; MOCVD; impurity phases; piezoelectric properties;
D O I：
10.1080/10584580108016896
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Epitaxial Pb(Mg1/3Nb2/3)O-3 (PMN) and (1-x)(Pb(Mg1/3Nb2/3)O-3)-x(PbTiO3) (PMN-PT) thin films have been deposited by metalorganic chemical vapor deposition at 700 - 780 degreesC on (100) SrTiO3 and SrRuO3/SrTiO3 substrates. Room temperature values of 900 and 1.5%, were measured for the zero-bias permittivity and loss respectively, at 10 kHz for 220 nm thick pure PMN films. For PMN-PT films, the small-signal permittivity ranged from 1000 to 1500 depending on deposition conditions and Ti content; correspondingly low values for the zero-bias dielectric loss between 1 and 5% were determined for all samples. For PMN-PT with x of approximately 0.30-0.35, polarization hysteresis with P(r)approximate to 18 muC/cm(2) was obtained. Initial piezoresponse results are discussed.
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页码：151 / 158
页数：8
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