Spatial structure of a single Mn impurity state on GaAs(110) surface

被引：23
作者：
Kitchen, D
Richardella, A
Yazdani, A
机构：
[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
[2] Univ Illinois, Fredrick Seitz Mat Res Lab, Urbana, IL 61801 USA
来源：
JOURNAL OF SUPERCONDUCTIVITY | 2005年 / 18卷 / 01期
关键词：
Mn; GaAs; impurity; Scanning Tunneling Microscopy (STM);
D O I：
10.1007/s10948-005-2144-x
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Using a low temperature scanning tunneling microscope (STM), we have manipulated individual Mn adatoms at the GaAs (110) surface to apparently bond with two surface As atoms. In this configuration the Mn atoms, which either are at an interstitial site or have substituted for a surface Ga atom, give rise to strong in-gap levels as probed by spatially resolved STM spectroscopy measurements. Mapping the Mn-induced in-gap bound state shows an unusual spatial structure, with highly anisotropic character. The bound state shares some characteristic features with subsurface Mn and Zn dopants.
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页码：23 / 28
页数：6
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