On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs

被引：55
作者：
Granzner, R [1 ]
Polyakov, VM [1 ]
Schwierz, F [1 ]
Kittler, M [1 ]
Doll, T [1 ]
机构：
[1] Tech Univ Ilmenau, Fachgebiet Festkorperelekt, D-98684 Ilmenau, Germany
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 19卷 / 1-2期
关键词：
scaled MOSFET; double-gate MOSFET; simulation; Monte Carlo; drift-diffusion;
D O I：
10.1016/S1386-9477(03)00290-X
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The drain currents of nanometer double-gate MOSFETs with gate lengths in the range from 100 to 5 nm are calculated using a hierarchy of simulation approaches. By comparing Monte Carlo (MC), drift-diffusion (DD), and hydrodynamic (HD) simulation results the suitability of the DD and HD models for the investigation of the on- and subthreshold currents of nano-scaled MOSFETs is tested. Modifications of the velocity-field characteristics in the DD simulations are suggested to improve the accuracy of the DD model. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：33 / 38
页数：6
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