Synchrotron-radiation-induced formation of salt particles on an X-ray lithography mask

被引：5

作者：

Utsumi, Y ^{[1
]}

Takahashi, J ^{[1
]}

Hosokawa, T ^{[1
]}

机构：

[1] NTT Corp, Syst Elect Labs, Atsugi, Kanagawa 24301, Japan

来源：

JOURNAL OF SYNCHROTRON RADIATION | 1998年 / 5卷

关键词：

hard X-ray; photochemical reaction; X-ray lithography; contamination; atmosphere;

D O I：

10.1107/S0909049597017603

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The suppression and removal of contaminants on X-ray masks are required for the application of X-ray Lithography to practical semiconductor production, because contamination is easily transferred to the replicated resist patterns and degrades the LSI patterns In order to study contamination of a Ta/SiN X-ray mask, its growth process was investigated using an atmospheric reaction chamber and in situ observation apparatus for gases at atmospheric pressure. It was found that the contamination particles were ammonium sulfate and oxalate. The sources of the salt particle were also identified.

引用

页码：1141 / 1143

页数：3

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