Proton-implantation-induced optical phenomena in SiO2:GeO2 glasses:: formation of photosensitive defects and nanometer sized Ge crystals

被引：5

作者：

Kawamura, K ^{[1
]}

Kameshima, Y ^{[1
]}

Hosono, H ^{[1
]}

Kawazoe, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 226, Japan

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1998年 / 54卷 / 1-2期

关键词：

proton-implantation; SiO2 : GeO2 glasses; photosensitive defects;

D O I：

10.1016/S0921-5107(98)00017-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ion implantation of 1.5 MeV protons to 1GeO(2)-9SiO(2) glasses induces interesting phenomena. For a fluence 1x10(17) cm(-2) oxygen-deficient type point defects associated with Ge ions were primarily formed, and for fluences >5x10(17) cm(-2) the formation of Ge fine crystalline particles was observed. Nanometer-sized crystalline Ge colloid particles were formed by implantation of protons at 1.5 MeV without post-thermal annealing. The depth of colloid formation layers from the implanted surface agreed with the peak region of electronic energy deposition. No formation of Ge colloids and the Ge related oxygen point defects were noted for implantation of 1.5 MeV He+ to a fluence of 1 x 10(18) cm(-2). A tentative mechanism for the Ge nanocrystal formation is proposed. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：18 / 23

页数：6

共 26 条

[1] LASER-INDUCED FLUORESCENCE AND NONLINEAR OPTICAL-PROPERTIES OF ION-IMPLANTED FUSED-SILICA [J].