Compact Super Electron-Donor to Monolayer MoS2

被引:14
作者
Reed-Lingenfelter, Serrae N. [1 ,2 ]
Chen, Yifeng [3 ]
Yarali, Milad [1 ,2 ]
Charboneau, David J. [4 ]
Curley, Julia B. [4 ]
Hynek, David J. [1 ,2 ]
Wang, Mengjing [1 ,2 ]
Williams, Natalie L. [2 ,4 ]
Hazari, Nilay [4 ]
Quek, Su Ying [3 ,5 ]
Cha, Judy J. [1 ,2 ]
机构
[1] Yale Univ, Dept Mech Engn & Mat Sci, New Haven, CT 06511 USA
[2] Energy Sci Inst, Yale West Campus, West Haven, CT 06516 USA
[3] Natl Univ Singapore, Dept Phys, Singapore 117551, Singapore
[4] Yale Univ, Dept Chem, 225 Prospect St, New Haven, CT 06511 USA
[5] Natl Univ Singapore, Ctr Adv 2D Mat, Singapore 117546, Singapore
基金
新加坡国家研究基金会;
关键词
Two-dimensional materials; molybdenum disulfide; surface functionalization; molecular doping; atomic force microscopy (AFM); electric transport properties; BILAYER GRAPHENE; BAND-GAP; DIRAC POINT; TRANSISTORS;
D O I
10.1021/acs.nanolett.2c01167
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The surface functionalization of two-dimensional (2D) materials with organic electron donors (OEDs) is a powerful tool to modulate the electronic properties of the material. Here we report a novel molecular dopant, Me-OED, that demonstrates record-breaking molecular doping to MoS2, achieving a carrier density of 1.10 +/- 0.37 X 10(14) cm(-2) at optimal functionalization conditions; the achieved carrier density is much higher than those by other OEDs such as benzyl viologen and an OED based on 4,4'-bipyridine. This impressive doping power is attributed to the compact size of Me-OED, which leads to high surface coverage on MoS2. To confirm, we study Bu-t-OED, which has an identical reduction potential to Me-OED but is significantly larger. Using field-effect transistor measurements and spectroscopic characterization, we estimate the doping powers of Me- and Bu-t-OED are 0.22-0.44 and 0.11 electrons per molecule, respectively, in good agreement with calculations. Our results demonstrate that the small size of Me-OED is critical to maximizing the surface coverage and molecular interactions with MoS2, enabling us to achieve unprecedented doping of MoS2.
引用
收藏
页码:4501 / 4508
页数:8
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