Numerical study on the interface properties of a ZnO/c-Si heterojunction solar cell

被引：19

作者：

Askari, Syed Sadique Anwer ^{[1
,2
]}

Kumar, Manoj ^{[1
,2
]}

Das, Mukul Kumar ^{[1
,2
]}

机构：

[1] IIT ISM Dhanbad, Dept Elect Engn, Dhanbad, Bihar, India

[2] IIT ISM Dhanbad, Ctr Excellence Renewable Energy, Dhanbad, Bihar, India

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2018年 / 33卷 / 11期

关键词：

solar cell; zinc oxide; heterojunction; ZnO/c-Si heterointerface; antireflection coating; TCAD; interface recombination; EFFICIENCY; OXIDE;

D O I：

10.1088/1361-6641/aadf71

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report a detailed simulation study and analysis of interface effects on the performance of a ZnO/crystalline Si heterojunction solar cell by considering the ZnO carrier concentration and conduction band offset-dependent interface recombination. Partial deviation in results, observed by a group of researchers when they experimentally tested a theoretical solution proposed by another group for the reduction of interface recombination has been addressed in this report. The effect of ZnO layer thickness on the performance of the solar cell is also studied in this report. Results show that interface recombination can be reduced and hence efficiency can be enhanced by controlling the carrier concentration and thickness of the ZnO layer along with the band offsets between ZnO and Si. Thus, appropriate engineering for the reduction of conduction band offset and a suitable choice of ZnO layer thickness are important in obtaining the enhanced efficiency.

引用

页数：8

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