Comments on "A physics-based analytic solution to the MOSFET surface potential from accumulation to strong-inversion region"

被引：4

作者：

Gildenblat, G. ^{[1
]}

Klaassen, D. B. M.

McAndrew, C. C.

机构：

[1] Arizona State Univ, Tempe, AZ 85287 USA

[2] NXP Semicond, NL-5656 AG Eindhoven, Netherlands

[3] Freescale Semicond, Austin, TX 78735 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 08期

关键词：

D O I：

10.1109/TED.2007.900842

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2061 / 2062

页数：2

共 6 条

[1]

GILDENBLAT G, 2006, P TECH WORKSH COMP M, P604

[2] PSP: An advanced surface-potential-based MOSFET model for circuit simulation [J].

Gildenblat, Germady ;

Li, Xin ;

Wu, Weimin ;

Wang, Hailing ;

Jha, Amit ;

van Langevelde, Ronald ;

Smit, Geert D. J. ;

Scholten, Andries J. ;

Klaassen, Dirk B. M. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (09) :1979-1993

[3] EFFECTS OF DIFFUSION CURRENT ON CHARACTERISTICS OF METAL-OXIDE (INSULATOR)-SEMICONDUCTOR TRANSISTORS [J].

PAO, HC ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1966, 9 (10) :927-+

[4] EFFECTS OF FIXED BULK CHARGE ON CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J].

SAH, CT ;

PAO, HC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (04) :393-+

[5]

SAH CT, 2005, P NSTI NAN 2005 AN M, P347

[6]

Wu W, 2005, IEEE CUST INTEGR CIR, P819

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