Metal-Oxide FET Biosensor for Point-of-Care Testing: Overview and Perspective

被引:17
作者
Amen, Mohamed Taha [1 ]
Thuy Thi Thanh Pham [1 ]
Cheah, Edward [1 ]
Duy Phu Tran [1 ]
Thierry, Benjamin [1 ]
机构
[1] Univ South Australia, Future Ind Inst, Mawson Lakes Campus, Adelaide, SA 5000, Australia
基金
澳大利亚国家健康与医学研究理事会;
关键词
point-of-care testing; field effect transistor sensor; semiconductor materials; metal-oxide; regulatory pathway; FIELD-EFFECT-TRANSISTOR; SELF-ASSEMBLED MONOLAYERS; DEBYE-SCREENING LENGTH; CHEST-PAIN DIAGNOSIS; LABEL-FREE DETECTION; IN2O3; NANOWIRES; ELECTRICAL DETECTION; THIN-FILM; ON-CHIP; HYDROTHERMAL SYNTHESIS;
D O I
10.3390/molecules27227952
中图分类号
Q5 [生物化学]; Q7 [分子生物学];
学科分类号
071010 ; 081704 ;
摘要
Metal-oxide semiconducting materials are promising for building high-performance field-effect transistor (FET) based biochemical sensors. The existence of well-established top-down scalable manufacturing processes enables the reliable production of cost-effective yet high-performance sensors, two key considerations toward the translation of such devices in real-life applications. Metal-oxide semiconductor FET biochemical sensors are especially well-suited to the development of Point-of-Care testing (PoCT) devices, as illustrated by the rapidly growing body of reports in the field. Yet, metal-oxide semiconductor FET sensors remain confined to date, mainly in academia. Toward accelerating the real-life translation of this exciting technology, we review the current literature and discuss the critical features underpinning the successful development of metal-oxide semiconductor FET-based PoCT devices that meet the stringent performance, manufacturing, and regulatory requirements of PoCT.
引用
收藏
页数:24
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