Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device

被引：24

作者：

Deuermeier, Jonas ^{[1
,2
]}

Kiazadeh, Asal ^{[1
,2
]}

Klein, Andreas ^{[3
]}

Martins, Rodrigo ^{[1
,2
]}

Fortunato, Elvira ^{[1
,2
]}

机构：

[1] Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci, i3N CENIMAT, Campus Caparica, P-2829516 Caparica, Portugal

[2] CEMOP UNINOVA, Campus Caparica, P-2829516 Caparica, Portugal

[3] Tech Univ Darmstadt, Dept Mat & Earth Sci, Otto Berndt Str 3, D-64287 Darmstadt, Germany

来源：

NANOMATERIALS | 2019年 / 9卷 / 02期

基金：

欧盟地平线“2020”;

关键词：

resistive switching memories; multi-level cell; copper oxide; grain boundaries; aluminum oxide; ELECTRICAL-CONDUCTIVITY;

D O I：

10.3390/nano9020289

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Multi-level resistive switching characteristics of a Cu2O/Al2O3 bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide-an unusual property for an oxide semiconductor-are discussed for the first time regarding their role in the resistive switching mechanism.

引用

页数：10

共 38 条

[1] A Thermally Stable and High-Performance 90-nm Al2O3\Cu-Based 1T1R CBRAM Cell [J].

Belmonte, Attilio ;

Kim, Woosik ;

Chan, Boon Teik ;

Heylen, Nancy ;

Fantini, Andrea ;

Houssa, Michel ;

Jurczak, Malgorzata ;

Goux, Ludovic .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (11) :3690-3695

[2]

Bersuker G., 2010, ESSDERC 2010 - 40th European Solid State Device Research Conference, P333, DOI 10.1109/ESSDERC.2010.5618225

[3] THE COPPER OXIDE RECTIFIER [J].

BRATTAIN, WH .

REVIEWS OF MODERN PHYSICS, 1951, 23 (03) :203-212

[4] High Temperature Thermal Conductivity of Amorphous Al2O3 Thin Films Grown by Low Temperature ALD [J].

Cappella, Andrea ;

Battaglia, Jean-Luc ;

Schick, Vincent ;

Kusiak, Andrzej ;

Lamperti, Alessio ;

Wiemer, Claudia ;

Hay, Bruno .

ADVANCED ENGINEERING MATERIALS, 2013, 15 (11) :1046-1050

[5] UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistors [J].

Carlos, Emanuel ;

Branquinho, Rita ;

Kiazadeh, Asal ;

Barquinha, Pedro ;

Martins, Rodrigo ;

Fortunato, Elvira .

ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (45) :31100-31108

[6] Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices [J].

Celano, Umberto ;

Goux, Ludovic ;

Belmonte, Attilio ;

Opsomer, Karl ;

Franquet, Alexis ;

Schulze, Andreas ;

Detavernier, Christophe ;

Richard, Olivier ;

Bender, Hugo ;

Jurczak, Malgorzata ;

Vandervorst, Wilfried .

NANO LETTERS, 2014, 14 (05) :2401-2406

[7] MODEL FOR RESISTIVE-CONDUCTIVE TRANSITION IN REVERSIBLE RESISTANCE-SWITCHING SOLIDS [J].

COOK, EL .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (02) :551-&

[8] Visualization of nanocrystalline CuO in the grain boundaries of Cu2O thin films and effect on band bending and film resistivity [J].

Deuermeier, Jonas ;

Liu, Hongjun ;

Rapenne, Laetitia ;

Calmeiro, Tomas ;

Renou, Gilles ;

Martins, Rodrigo ;

Munoz-Rojas, David ;

Fortunato, Elvira .

APL MATERIALS, 2018, 6 (09)

[9] Highly conductive grain boundaries in copper oxide thin films [J].

Deuermeier, Jonas ;

Wardenga, Hans F. ;

Morasch, Jan ;

Siol, Sebastian ;

Nandy, Suman ;

Calmeiro, Tomas ;

Martins, Rodrigo ;

Klein, Andreas ;

Fortunato, Elvira .

JOURNAL OF APPLIED PHYSICS, 2016, 119 (23)

[10] Substrate reactivity as the origin of Fermi level pinning at the Cu2O/ALD-Al2O3 interface [J].

Deuermeier, Jonas ;

Bayer, Thorsten J. M. ;

Yanagi, Hiroshi ;

Kiazadeh, Asal ;

Martins, Rodrigo ;

Klein, Andreas ;

Fortunato, Elvira .

MATERIALS RESEARCH EXPRESS, 2016, 3 (04)

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