Polarization Properties of Deep-Ultraviolet Optical Gain in Al-Rich AlGaN Structures

被引：10

作者：

Pecora, Emanuele Francesco

Zhang, Wei

Yin, Jian

Paiella, Roberto

Dal Negro, Luca ^{[1
]}

Moustakas, Theodore D.

机构：

[1] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 03期

关键词：

SILICON NANOCRYSTALS; QUANTUM-WELLS; EMISSION; LASER; BEAM;

D O I：

10.1143/APEX.5.032103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The polarization properties of the amplified spontaneous emission (ASE) in the deep-UV wavelengths from AlGaN/AlN structures with 70% Al content have been investigated. Samples are prepared through a novel liquid phase epitaxy mode leading to strong compositional fluctuations. Large net modal gain is quantified to 230 nm after femtosecond UV optical pumping by the variable-stripe length technique. A strong transverse electric (TE)-polarization mode of the amplified emission has been demonstrated, together with an unpolarized emission giving rise to absorption only. These measurements provide an important observation in order to understand the origin of the optical gain in AlGaN alloys with high Al content. (c) 2012 The Japan Society of Applied Physics

引用

页数：3

共 50 条

[41] Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes
Kolbe, Tim
Knauer, Arne
Chua, Chris
Yang, Zhihong
Einfeldt, Sven
Vogt, Patrick
Johnson, Noble M.
Weyers, Markus
Kneissl, Michael
APPLIED PHYSICS LETTERS, 2010, 97 (17)
[42] Effect of strain-polarization fields on optical transitions in AlGaN/GaN multi-quantum well structures
Kladko, V.
Kuchuk, A.
Naumov, A.
Safriuk, N.
Kolomys, O.
Kryvyi, S.
Stanchu, H.
Belyaev, A.
Strelchuk, V.
Yavich, B.
Mazur, Yu. I.
Ware, M. E.
Salamo, G. J.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2016, 76 : 140 - 145
[43] Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures
Verma, Jai
Islam, S. M.
Protasenko, Vladimir
Kandaswamy, Prem Kumar
Xing, Huili
Jena, Debdeep
APPLIED PHYSICS LETTERS, 2014, 104 (02)
[44] Effect of graded Al content in the last quantum barrier on the luminescence properties of ultraviolet InGaN/AlGaN multiple quantum wells
Liu, Wei
Gao, Junhua
Zhang, Jie
MICRO AND NANOSTRUCTURES, 2023, 184
[45] Demonstration of enhanced optical polarization for improved deep ultraviolet light extraction in coherently grown semipolar Al0.83Ga0.17N/AlN on ZnO substrates
Ueno, Kohei
Kobayashi, Atsushi
Ohta, Jitsuo
Oshima, Masaharu
Fujioka, Hiroshi
APPLIED PHYSICS LETTERS, 2011, 99 (12)
[46] In situ fabrication of Al surface plasmon nanoparticles by metal-organic chemical vapor deposition for enhanced performance of AlGaN deep ultraviolet detectors
Wu, You
Sun, Xiaojuan
Shi, Zhiminq
Jia, Yuping
Jiang, Ke
Ben, Jianwei
Kai, Cuihong
Wang, Yong
Lu, Wei
Li, Dabing
NANOSCALE ADVANCES, 2020, 2 (05): : 1854 - 1858
[47] Defect-Resistant Radiative Performance of m-Plane Immiscible Al1-xInxN Epitaxial Nanostructures for Deep-Ultraviolet and Visible Polarized Light Emitters
Chichibu, Shigefusa F.
Kojima, Kazunobu
Uedono, Akira
Sato, Yoshitaka
ADVANCED MATERIALS, 2017, 29 (05)
[48] Band structures and optical properties of Ag and Al co-doped ZnO by experimental and theoretic calculation
Chen, Haixia
Qu, Yongfeng
Sun, Liang
Peng, Jianhong
Ding, Jijun
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2019, 114
[49] Crystal, electronic structures, optical and magnetic properties of Tb4Al2O9
Li, Y. Q.
Hirosaki, N.
Xie, R. J.
Takeda, T.
Lofland, S. E.
Ramanujachary, K. V.
JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 484 (1-2) : 943 - 948
[50] High-temperature optical properties of sensitized Er3+ in Si-rich SiO2 - implications for gain performance
Savchyn, Oleksandr
Todi, Ravi M.
Coffey, Kevin R.
Kik, Pieter G.
OPTICAL MATERIALS, 2010, 32 (09) : 1274 - 1278

← 1 2 3 4 5 →