Polarization Properties of Deep-Ultraviolet Optical Gain in Al-Rich AlGaN Structures

被引：10
作者：
Pecora, Emanuele Francesco
Zhang, Wei
Yin, Jian
Paiella, Roberto
Dal Negro, Luca [1 ]
Moustakas, Theodore D.
机构：
[1] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA
来源：
APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 03期
关键词：
SILICON NANOCRYSTALS; QUANTUM-WELLS; EMISSION; LASER; BEAM;
D O I：
10.1143/APEX.5.032103
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The polarization properties of the amplified spontaneous emission (ASE) in the deep-UV wavelengths from AlGaN/AlN structures with 70% Al content have been investigated. Samples are prepared through a novel liquid phase epitaxy mode leading to strong compositional fluctuations. Large net modal gain is quantified to 230 nm after femtosecond UV optical pumping by the variable-stripe length technique. A strong transverse electric (TE)-polarization mode of the amplified emission has been demonstrated, together with an unpolarized emission giving rise to absorption only. These measurements provide an important observation in order to understand the origin of the optical gain in AlGaN alloys with high Al content. (c) 2012 The Japan Society of Applied Physics
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页数：3
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