Uniformly distributed wideband metal-oxide-semiconductor field-effect transistor model for complementary metal-oxide-semiconductor radio-frequency integrated cirsuits applications

被引：1
作者：
Liang, Hsiao-Bin [1 ]
Tsou, Yi-Hsun [1 ]
Lin, Yo-Sheng [1 ]
Chen, Chi-Chen [1 ]
机构：
[1] Natl Chi Nan Univ, Dept Elect Engn, Puli 54561, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 02期
关键词：
MOSFETs; uniformly distributed; gate resistance; unit cell; kink phenomenon; S-parameters; current gain; unilateral gain;
D O I：
10.1143/JJAP.47.807
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper, a uniformly distributed wide-band metal-oxide-semi conductor field-effect transistor (MOSFET) model constructed by several same unit cells in parallel is presented. The kink phenomenon of scattering parameter S, I due to the distributed gate-resistance of MOSFETs can be fitted well by this model. Good agreement between the measured and modeled results of scattering parameters S(22), current gain H(21), and unilateral gain U are also demonstrated. In addition, the impact of distributed gate-resistance on cut-off frequency (f(T)) and maximum oscillation frequency (f(max)) performances of single gate-finger MOSFETs with large gate-width of 20, 40, 80, 120, and 160 mu m are quantitatively characterized and analyzed.
引用
收藏
页码：807 / 813
页数：7
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