Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy:: In situ observations and detailed modeling of the growth

被引：6
作者：
Murata, T [1 ]
Nakazawa, H [1 ]
Tsukidate, Y [1 ]
Suemitsu, M [1 ]
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 06期
关键词：
D O I：
10.1063/1.1389768
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The growth rate and surface hydrogen coverage during Si gas-source molecular beam epitaxy using disilane have been obtained as functions of both the growth temperature and the source-gas pressure. The activation energy of the low-temperature (< 600 degreesC) growth rate was found to increase with the source-gas pressure, indicating a contribution by the adsorption process in these low-temperature growth kinetics. Several growth models have been constructed based on the results, among which the two-site/four-site-adsorption model [M. Suemitsu , Jpn. J. Appl. Phys., Part 2 36, L625 (1997)] showed the best fit to both the growth rate and the hydrogen coverage. (C) 2001 American Institute of Physics.
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页码：746 / 748
页数：3
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