Planar n+-in-n silicon pixel sensors for the ATLAS IBL upgrade

被引：12

作者：

Goessling, C. ^{[1
]}

Klingenberg, R. ^{[1
]}

Muenstermann, D. ^{[1
]}

Rummler, A. ^{[1
]}

Troska, G. ^{[1
]}

Wittig, T. ^{[1
]}

机构：

[1] TU Dortmund, Lehrstuhl Expt Phys 4, D-44221 Dortmund, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2011年 / 650卷 / 01期

关键词：

Silicon; Pixel sensors; Radiation hardness; Radiation damage; Irradiation; ATLAS; IBL; SLHC;

D O I：

10.1016/j.nima.2010.11.186

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The ATLAS experiment at the LHC is planning to upgrade its pixel detector by the installation of a 4th pixel layer, the insertable b-layer IBL with a mean sensor radius of only 32 mm from the beam axis. Being very close to the beam, the radiation damage of the IBL sensors might be as high as 5 x 10(15) n(eq) cm(-2) at their end-of-life. To investigate the radiation hardness and suitability of the current ATLAS pixel sensors for IBL fluences, n(+)-in-n silicon pixel sensors from the ATLAS Pixel production have been irradiated by reactor neutrons to the IBL design fluence and been tested with pions at the SPS and with electrons from a Sr-90 source in the laboratory. The collected charge was found to exceed 10 000 electrons per MIP at 1 kV of bias voltage which is in agreement with data collected with strip sensors. With an expected threshold of 3000-4000 electrons, this result suggests that planar n(+)-in-n pixel sensors are radiation hard enough to be used as IBL sensor technology. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：198 / 201

页数：4

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