In-phase power-combined frequency triplers at 300 GHz

被引：76
|
作者：
Maestrini, Alain [1 ,2 ]
Ward, John S. [3 ]
Tripon-Canseliet, Charlotte [4 ]
Gill, John J. [3 ]
Lee, Choonsup
Javadi, Hamid [3 ]
Attopadhyay, Goutam Ch. [3 ]
Mehdi, Imran [3 ]
机构：
[1] Univ Paris 06, LISIF, Paris, France
[2] Observ Paris, Lerma, France
[3] CALTECH, Jet Propuls Lab, Pasadena, CA 91125 USA
[4] Univ Paris 06, LISIF, F-75005 Paris, France
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2008年 / 18卷 / 03期
基金：
美国国家航空航天局;
关键词：
frequency multiplier; frequency tripler; local oscillator; planar diode; power-combining; Schottky diode; sub-millimeter wavelengths; varactor;
D O I：
10.1109/LMWC.2008.916820
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the design, fabrication and characterization of a 300 GHz Schottky-diode frequency tripler made of two mirror-image integrated circuits that are power-combined in-phase in a single waveguide block using compact Y-junctions at the input and output waveguides. Each chip features six anodes on a 5 mu m thick GaAs membrane. The tripler has 5-15% conversion efficiency measured across the 265-330 GHz band when driven with 50-250 mW of input power at room temperature. At 318 GHz it delivers a peak power of 26 mW with 11 % conversion efficiency. The power-combined frequency multiplier is compared with a single-chip tripler designed for the same band using the same integrated circuit.
引用
收藏
页码：218 / 220
页数：3
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