In-phase power-combined frequency triplers at 300 GHz

被引：76

作者：

Maestrini, Alain ^{[1
,2
]}

Ward, John S. ^{[3
]}

Tripon-Canseliet, Charlotte ^{[4
]}

Gill, John J. ^{[3
]}

Lee, Choonsup

Javadi, Hamid ^{[3
]}

Attopadhyay, Goutam Ch. ^{[3
]}

Mehdi, Imran ^{[3
]}

机构：

[1] Univ Paris 06, LISIF, Paris, France

[2] Observ Paris, Lerma, France

[3] CALTECH, Jet Propuls Lab, Pasadena, CA 91125 USA

[4] Univ Paris 06, LISIF, F-75005 Paris, France

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2008年 / 18卷 / 03期

基金：

美国国家航空航天局;

关键词：

frequency multiplier; frequency tripler; local oscillator; planar diode; power-combining; Schottky diode; sub-millimeter wavelengths; varactor;

D O I：

10.1109/LMWC.2008.916820

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the design, fabrication and characterization of a 300 GHz Schottky-diode frequency tripler made of two mirror-image integrated circuits that are power-combined in-phase in a single waveguide block using compact Y-junctions at the input and output waveguides. Each chip features six anodes on a 5 mu m thick GaAs membrane. The tripler has 5-15% conversion efficiency measured across the 265-330 GHz band when driven with 50-250 mW of input power at room temperature. At 318 GHz it delivers a peak power of 26 mW with 11 % conversion efficiency. The power-combined frequency multiplier is compared with a single-chip tripler designed for the same band using the same integrated circuit.

引用

页码：218 / 220

页数：3

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