Sublimation growth of bulk crystals of AlN-rich (AlN)x(SiC)1-x solid solutions

被引：5

作者：

Bickermann, Matthias ^{[1
]}

Filip, Octavian ^{[1
]}

Epelbaum, Boris M. ^{[1
]}

Heimann, Paul ^{[1
]}

Winnacker, Albrecht ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Dept Mat Sci 6, D-91058 Erlangen, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

关键词：

AlN-SiC solution; growth from vapour; absorption; cathodoluminescence; QUALITY; SYSTEM;

D O I：

10.1002/pssc.200983423

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

(AlN)(x)(SiC)(1-x) bulk single crystals are prepared by sublimation growth employing an AlN source placed in a tantalum carbide container. A 6H-SiC substrate acts both as seed and as source for silicon and carbon species. As the growth temperature is increased from 1900 degrees C to 2050 degrees C or the seed surface orientation is changed from (0115) to (0001), crystal coloration changes from yellowish to greenish to blackish. We attribute the change in coloration to an increasing Si/C content in the samples and estimate that up to 10% at of Si and C are incorporated. Accompanying changes in below band-gap optical absorption and cathodoluminescence are discussed. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：3