Sublimation growth of bulk crystals of AlN-rich (AlN)x(SiC)1-x solid solutions

被引：5

作者：

Bickermann, Matthias ^{[1
]}

Filip, Octavian ^{[1
]}

Epelbaum, Boris M. ^{[1
]}

Heimann, Paul ^{[1
]}

Winnacker, Albrecht ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Dept Mat Sci 6, D-91058 Erlangen, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

关键词：

AlN-SiC solution; growth from vapour; absorption; cathodoluminescence; QUALITY; SYSTEM;

D O I：

10.1002/pssc.200983423

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

(AlN)(x)(SiC)(1-x) bulk single crystals are prepared by sublimation growth employing an AlN source placed in a tantalum carbide container. A 6H-SiC substrate acts both as seed and as source for silicon and carbon species. As the growth temperature is increased from 1900 degrees C to 2050 degrees C or the seed surface orientation is changed from (0115) to (0001), crystal coloration changes from yellowish to greenish to blackish. We attribute the change in coloration to an increasing Si/C content in the samples and estimate that up to 10% at of Si and C are incorporated. Accompanying changes in below band-gap optical absorption and cathodoluminescence are discussed. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：3

共 13 条

[1] Growth of AlN-SiC solid solutions by sequential supply epitaxy [J].

Avramescu, A ;

Hirayama, H ;

Aoyagi, Y ;

Tanaka, S .

JOURNAL OF CRYSTAL GROWTH, 2002, 234 (2-3) :435-439

[2] Orientation-dependent properties of aluminum nitride single crystals [J].

Bickermann, M. ;

Heimann, P. ;

Epelbaum, B. M. .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06) :1902-1906

[3] Incorporation of boron and vanadium during PVT growth of 6H-SiC crystals [J].

Bickermann, M ;

Epelbaum, BM ;

Hofmann, D ;

Straubinger, TL ;

Weingärtner, R ;

Winnacker, A .

JOURNAL OF CRYSTAL GROWTH, 2001, 233 (1-2) :211-218

[4] Point defect content and optical transitions in bulk aluminum nitride crystals [J].

Bickermann, Matthias ;

Epelbaum, Boris M. ;

Filip, Octavian ;

Heimann, Paul ;

Nagata, Shunro ;

Winnacker, Albrecht .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2009, 246 (06) :1181-1183

[5] NEW MATERIALS IN SI-C-AL-O-N AND RELATED SYSTEMS [J].

CUTLER, JB ;

MILLER, PD ;

RAFANIELLO, W ;

PARK, HK ;

THOMPSON, DP ;

JACK, KH .

NATURE, 1978, 275 (5679) :434-435

[6] Interface properties of an AlN/(AlN)x(SiC)1-x/4H-SiC heterostructure [J].

Edgar, J. H. ;

Gu, Z. ;

Gu, L. ;

Smith, David J. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (15) :3720-3725

[7] Sublimation growth of bulk AlN crystals: Materials compatibility and crystal quality [J].

Epelbaum, BM ;

Hofmann, D ;

Bickermann, M ;

Winnacker, A .

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 :1445-1448

[8] Growth and characterization of high-quality 6H-SiC (01(1)over-bar5) bulk crystals [J].

Filip, O. ;

Epelbaum, B. M. ;

Bickermann, M. ;

Winnacker, A. .

SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 :17-+

[9] Seeded Growth of AlN on (0001)-plane 6H-SiC Substrates [J].

Filip, O. ;

Epelbaum, B. M. ;

Bickermann, M. ;

Heimann, P. ;

Nagata, S. ;

Winnacker, A. .

SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 :983-986

[10] Different optical absorption edges in AlN bulk crystals grown in m- and c-orientations [J].

Lu, P. ;

Collazo, R. ;

Dalmau, R. F. ;

Durkaya, G. ;

Dietz, N. ;

Sitar, Z. .

APPLIED PHYSICS LETTERS, 2008, 93 (13)

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