The Effect of Annealing on the Properties of Ga2O3 Anodic Films

被引：11

作者：

Kalygina, V. M. ^{[1
]}

Zarubin, A. N. ^{[1
]}

Nayden, Ye P. ^{[1
]}

Novikov, V. A. ^{[1
]}

Petrova, Yu S. ^{[1
]}

Tolbanov, O. P. ^{[1
]}

Tyazhev, A. V. ^{[1
]}

Yaskevich, T. M. ^{[1
]}

机构：

[1] Tomsk Natl Res State Univ, Russian Acad Sci, Siberian Phys Tech Inst, Tomsk 634050, Russia

来源：

SEMICONDUCTORS | 2012年 / 46卷 / 02期

关键词：

THIN-FILMS; OXIDE; O-2; GAN;

D O I：

10.1134/S1063782612020145

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of annealing and oxygen plasma on the electrical characteristics of gallium oxide films has been investigated. Ga2O3 films with thicknesses of 200-300 nm were formed by the anodic oxidation of n-GaAs wafers with the donor concentration N-d = (1-2) x 10(16) cm(-3). It is shown that, after annealing at 900 degrees C for 30 min, the gallium arsenide films contain only the beta Ga2O3 phase. The effect of the duration of oxygen plasma treatment prior to annealing on the nucleation of beta-phase crystallites with different orientations has been studied. It has been established that the electrical conductivity of the Ga2O3 films can be managed by annealing and variation in the duration of oxygen plasma treatment. It is shown that the response of the V/Ni-GaAs-Ga2O3-V/Ni structure to a mixture exhaled by a person depends on the value and sign of the potential on the control electrode.

引用

页码：267 / 273

页数：7

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