Achieving weak anisotropy in N-type I-doped SnSe polycrystalline thermoelectric materials

被引：11

作者：

Abbas, Adeel ^{[1
]}

Xu, Zhuoming ^{[1
]}

Nisar, Mohammad ^{[1
]}

Li, Delong ^{[2
]}

Li, Fu ^{[1
]}

Zheng, Zhuanghao ^{[1
]}

Liang, Guangxing ^{[1
]}

Fan, Ping ^{[1
]}

Chen, Yue-Xing ^{[1
]}

机构：

[1] Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Adv Thin Films & Applicat, Minist Educ & Guangdong Prov,Key Lab Optoelect Dev, Shenzhen 518060, Peoples R China

[2] Shenzhen Univ, Coll Elect & Informat Engn, Shenzhen 518060, Peoples R China

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2022年 / 42卷 / 15期

关键词：

SnSe; Bulk; Thermoelectric properties; Iodine doping; N-type materials; THERMAL-CONDUCTIVITY; PERFORMANCE; FIGURE; MERIT;

D O I：

10.1016/j.jeurceramsoc.2022.07.052

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

SnSe is a very strong anisotropic material; sometimes, strong anisotropy is unenviable for producing parts of thermoelectric (TE) devices. In order to study the efficient preparation of high-performance n-type poly-crystalline SnSe with weak anisotropy, in this work, we combine mechanical alloying at 450 RPM for 10 h and spark plasma sintering at 773 K under 50 MPa pressure for the preparation of polycrystalline SnSe 0.95-xIx (x = 0,0.01,0.02,0.03) samples, and investigate the TE properties. The prepared samples show very weak anisotropy. With iodine doping, increased carrier concentration is observed, in agreement with DFT calculations. A peak ZT approximate to 1.02 at 723 K is observed with I-doping of x = 0.02, which is about 225% higher than that of undoped sample with ZT approximate to 0.31 at 723 K in parallel direction, mainly attributed to the enhanced power factor and about 56% reduced thermal conductivity from 0.68 Wm- 1K-1 to 0.30 Wm- 1K-1. TE properties in both directions are not much different, and the ratios of electrical and thermal conductivities in both directions are very close to unity.

引用

页码：7027 / 7035

页数：9

共 58 条

[1] Novel Thermal Diffusion Temperature Engineering Leading to High Thermoelectric Performance in Bi2Te3-Based Flexible Thin-Films [J].