Dopant stability and strain states in Co and Mn-doped Ge (001) epitaxial films

被引：15

作者：

Collins, B. A. ^{[1
]}

Chu, Y. S. ^{[2
]}

He, L. ^{[1
]}

Zhong, Y. ^{[2
]}

Tsui, F. ^{[1
]}

机构：

[1] Univ N Carolina, Dept Phys & Astron, Chapel Hill, NC 27599 USA

[2] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.77.193301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Systematic investigation of structural, chemical, and magnetic properties of Co and Mn-doped Ge (001) as a function of doping concentration reveals that codoping with Co can dramatically reduce phase separation and diffusion of Mn within the Ge lattice while it magnetically complements Mn. The measured strain states indicate the critical role played by substitutional Co with its strong tendency to dimerize with interstitial Mn. Selecting appropriate codopants that form energetically stable dimers in a semiconductor host is shown to be a viable approach, thus demonstrating the feasibility for engineering stable doped magnetic semiconductors.

引用

页数：4

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