The effect of crystallite size on thermoelectric properties of bulk nanostructured magnesium silicide (Mg2Si) compounds

被引:70
|
作者
Satyala, Nikhil [1 ]
Vashaee, Daryoosh [1 ]
机构
[1] Oklahoma State Univ, Helmerich Adv Technol Res Ctr, Tulsa, OK 74106 USA
基金
美国国家科学基金会;
关键词
ALLOYS; TELLURIDE; MG2GE;
D O I
10.1063/1.3684615
中图分类号
O59 [应用物理学];
学科分类号
摘要
In nanostructured bulk materials, the additional interfaces in the material enhance phonon scattering and reduce the thermal conductivity. However, interfaces also scatter electrons and deteriorate charge carrier transport. In order to benefit from the interfacial effects, the crystallite size in the material must be small compared with phonon mean free path (PMFP) and large compared with the charge carrier mean free path (CMFP). In this paper, we solve the Boltzmann transport equation for charge carriers and phonons. We show that bulk nanostructuring of Mg2Si is not an efficient method to enhance the figure-of-merit as the PMFP and CMFP are in the same range. (C) 2012 American Institute of Physics. [doi:10.1063/1.3684615]
引用
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页数:4
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