Wafer level measurement system for SARF characterization of metal lines
被引:10
作者:
Ciofi, C
论文数: 0引用数: 0
h-index: 0
机构:University of Pisa, Dipto. Ingegneria D., I-56126 Pisa, via Diotisalvi
Ciofi, C
DeMarinis, M
论文数: 0引用数: 0
h-index: 0
机构:University of Pisa, Dipto. Ingegneria D., I-56126 Pisa, via Diotisalvi
DeMarinis, M
Neri, B
论文数: 0引用数: 0
h-index: 0
机构:University of Pisa, Dipto. Ingegneria D., I-56126 Pisa, via Diotisalvi
Neri, B
机构:
[1] University of Pisa, Dipto. Ingegneria D., I-56126 Pisa, via Diotisalvi
来源:
MICROELECTRONICS AND RELIABILITY
|
1996年
/
36卷
/
11-12期
关键词:
D O I:
10.1016/0026-2714(96)00213-2
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
A feasibility study concerning the application of the SARF technique at wafer level has been performed. The main problem of this type of measurements is the excess noise generated at the point contacts used to supply the lines under investigation with the test current. This problem has been successfully solved by setting up a probe station entirely contained in a shielded box and by supplying the samples under test by means of purposely designed low noise current sources. The background noise of the whole measurement system coincides with that of the system used until now for packaged samples. Copyright (C) 1996 Elsevier Science Ltd