Green high-power tunable external-cavity GaN diode laser at 515 nm

被引：17

作者：

Chi, Mingjun ^{[1
]}

Jensen, Ole Bjarlin ^{[1
]}

Petersen, Paul Michael ^{[1
]}

机构：

[1] Tech Univ Denmark, Dept Photon Engn, DTU Foton, Frederiksborgvej 399,POB 49, DK-4000 Roskilde, Denmark

来源：

OPTICS LETTERS | 2016年 / 41卷 / 18期

关键词：

TAPERED AMPLIFIER; TUNING RANGE; GENERATION; LIGHT; MW;

D O I：

10.1364/OL.41.004154

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A 480 mW green tunable diode laser system is demonstrated for the first time to our knowledge. The laser system is based on a GaN broad-area diode laser and Littrow external-cavity feedback. The green laser system is operated in two modes by switching the polarization direction of the laser beam incident on the grating. When the laser beam is p-polarized, an output power of 50 mW with a tunable range of 9.2 nm is achieved. When the laser beam is s-polarized, an output power of 480 mW with a tunable range of 2.1 nm is obtained. This constitutes the highest output power from a tunable green diode laser system. (C) 2016 Optical Society of America

引用

页码：4154 / 4157

页数：4

共 18 条

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