Van der Waals heteroepitaxial AZO/NiO/AZO/muscovite (ANA/muscovite) transparent flexible memristor

被引：141

作者：

Van-Qui Le ^{[1
]}

Thi-Hien Do ^{[1
]}

Retamal, Jose Ramon Duran ^{[3
]}

Shao, Pao-Wen ^{[1
]}

Lai, Yu-Hong ^{[1
]}

Wu, Wen-Wei ^{[1
,8
]}

He, Jr-Hau ^{[3
]}

Chueh, Yu-Lun ^{[2
,6
,7
]}

Chu, Ying-Hao ^{[1
,4
,5
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

[3] King Abdullah Univ Sci & Technol, Comp Elect & Math Sci & Engn, Thuwal 239556900, Saudi Arabia

[4] Ind Technol Res Inst, Mat & Chem Res Labs, Zhudong 31040, Taiwan

[5] Natl Chiao Tung Univ, Ctr Emergent Funct Matter Sci, Hsinchu 30010, Taiwan

[6] Natl Tsing Hua Univ, Frontier Res Ctr Fundamental & Appl Sci Matters, Hsinchu 30013, Taiwan

[7] Natl Sun Yat Sun Univ, Dept Phys, Kaohsiung 80424, Taiwan

[8] Natl Chiao Tung Univ, Ctr Intelligent Semicond Nanosyst Technol Res, Hsinchu 300, Taiwan

来源：

NANO ENERGY | 2019年 / 56卷

关键词：

AZO/NiO/AZO/muscovite; Aluminum doped zinc oxide (AZO); Van der Waals; Transparent flexible memristor; FULLY TRANSPARENT; MEMORY; FILMS; GRAPHENE; OXIDE; HETEROJUNCTION; FABRICATION; TRANSISTORS; DEVICES; GROWTH;

D O I：

10.1016/j.nanoen.2018.10.042

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Multifunctional electronics featuring optical transparency, portability, mechanical flexibility, light-weight and environment-friendly are of great demands for next-generation smart electronics. Memristor represents one of the important chains in next-generation devices as the information computing and storage component. Here, we design the transparent flexible structure based on van der Waals heteroepitaxial AZO/NiO/AZO/muscovite (ANA/muscovite) for a memristor application. The (ANA/muscovite) memristor satisfies all the hardest requirements of a transparent soft device such as optical transparency over 80% in visible light and high performance with a ON/OFF resistance ratio > 10(5), stable endurance to 10(3) cycles and long retention time of 10(5) s. In addition, the ANA/muscovite memristor can work at various bending radii down to 5 mm, a mechanical bending after 1000 cycles at a curvature with a radius of 6.5 mm and a high temperature up to 185 degrees C, which deliver a pathway for future applications in flexible transparent smart electronics.

引用

页码：322 / 329

页数：8

共 47 条

[1] Flexible Multiferroic Bulk Heterojunction with Giant Magnetoelectric Coupling via van der Waals Epitaxy [J].