Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin Al2O3 Buried Oxide Layers

被引：50

作者：

Yokoyama, Masafumi ^{[1
]}

Iida, Ryo ^{[1
]}

Kim, Sanghyeon ^{[1
]}

Taoka, Noriyuki ^{[1
]}

Urabe, Yuji ^{[2
]}

Takagi, Hideki ^{[2
]}

Yasuda, Tetsuji ^{[2
]}

Yamada, Hisashi ^{[3
]}

Fukuhara, Noboru ^{[3
]}

Hata, Masahiko ^{[3
]}

Sugiyama, Masakazu ^{[1
]}

Nakano, Yoshiaki ^{[1
]}

Takenaka, Mitsuru ^{[1
]}

Takagi, Shinichi ^{[1
]}

机构：

[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Tokyo 1138656, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[3] Sumitomo Chem Co Ltd, Tsukuba, Ibaraki 3003294, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 09期

关键词：

CMOS; double-gate FETs; extremely thin body (ETB); ultrathin buried oxide (BOX) (UTBOX); wafer bonding; III-V-OI MOSFET; PERFORMANCE; TRANSISTORS;

D O I：

10.1109/LED.2011.2158568

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have demonstrated sub-10-nm extremely thin body (ETB) InGaAs-on-insulator (InGaAs-OI) nMOSFETs on Si wafers with Al2O3 ultrathin buried oxide (UTBOX) layers fabricated by direct wafer bonding process. We have fabricated the ETB InGaAs-OI nMOSFETs with channel thicknesses of 9 and 3.5 nm. The 9-nm-thick ETB InGaAs-OI nMOSFETs with a doping concentration (N-D) of 10(19) cm(-3) exhibit a peak electron mobility of 912 cm(2)/V . s and a mobility enhancement factor of 1.7 times against the Si nMOSFET at a surface carrier density (N-s) of 3 x 10(12) cm(-2). In addition, it has been found that, owing to Al2O3 UTBOX layers, the double-gate operation improves the cutoff properties. As a result, the highest on-current to the lowest off-current (I-on/I-off) ratio of approximately 10(7) has been obtained in the 3.5-nm-thick ETB InGaAs-OI nMOSFETs. These results indicate that the high-mobility III-V nMOSFETs can be realized even in sub-10-nm-thick channels.

引用

页码：1218 / 1220

页数：3

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