Electron hopping interactions in amorphous ZnO films probed by x-ray absorption near edge structure analysis

被引：7

作者：

Cho, Deok-Yong ^{[1
,3
]}

Kim, Jeong Hwan ^{[2
]}

Hwang, Cheol Seong ^{[2
]}

机构：

[1] Seoul Natl Univ, CSCMR, Seoul 151747, South Korea

[2] Seoul Natl Univ, WCU Hybrid Mat Program, Dept Mat Sci & Engn, Interuniv Semicond Res Ctr, Seoul 151744, South Korea

[3] Seoul Natl Univ, FPRD, Dept Phys & Astron, Seoul 151747, South Korea

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 22期

关键词：

ZINC-OXIDE;

D O I：

10.1063/1.3596701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The x-ray absorption near edge structures of amorphous ZnO (a-ZnO) films were examined. The near-edge structure, which reflects the virtual electron hopping interactions in the photoabsorption final states, increased in intensity compared to crystalline ZnO. Theoretical path-by-path analyses revealed that this reflects the extinction of the multiple hopping processes found in paths such as Zn -> O -> O'-> Zn or Zn -> O -> Zn'-> Zn while the Zn-(O or Zn) hopping interactions remain. This suggests that the structural disorders in a-ZnO can induce the localization of the conduction band through the limited hopping interactions. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3596701]

引用

页数：3

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