High-performance polysilicon TFTs using stacked Pr2O3/oxynitride gate dielectric

In this letter, we have developed, for the first time, a stacked Pr2O3/SiOxNy. gate dielectric into low-temperature polysilicon (poly-Si) thin-film transistors (TFTs). A high-performance TFT device that has a high effective carrier mobility, a high driving current, a small subthreshold swing, and a high I-ON/I-OFF current ratio can be achieved. This phenomenon is attributed to the smooth Pr2O3/Pol-Si interface provided by the N2O plasma treatment. The presence of the SiOxNy buffer layer also enhanced the electrical reliability of the Pr2O3 poly-Si TFT. All of these results suggest that a high-k Pr2O3 gate dielectric prepared under the buffer layer is a good candidate for high-performance TFTs.