Electrically tuned g tensor in an InAs self-assembled quantum dot

被引：31

作者：

Deacon, R. S. ^{[1
,2
]}

Kanai, Y. ^{[1
]}

Takahashi, S. ^{[1
]}

Oiwa, A. ^{[1
,2
]}

Yoshida, K. ^{[1
]}

Shibata, K. ^{[3
]}

Hirakawa, K. ^{[2
,3
,4
]}

Tokura, Y. ^{[5
]}

Tarucha, S. ^{[1
,4
]}

机构：

[1] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

[2] JST CREST, Kawaguchi, Saitama 3320012, Japan

[3] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[4] Univ Tokyo, INQIE, Meguro Ku, Tokyo 1538505, Japan

[5] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

PHYSICAL REVIEW B | 2011年 / 84卷 / 04期

关键词：

SINGLE-ELECTRON SPIN; MANIPULATION;

D O I：

10.1103/PhysRevB.84.041302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the all-electrical tuning of the Lande g tensor in a single uncapped InAs quantum dot contacted with a nanogap electrode technique and electrically gated with both back-and side-gate electrodes. Magnetotransport measurements allow extraction of the g tensor components from measurements of the Zeeman energy for magnetic fields applied in the plane of the sample. The side-gate electrode allows tuning of the anisotropy of the in-plane g tensor components and is suitable for the manipulation of the quantum-dot spin states using g factor modulation resonance schemes.

引用

页数：5

共 50 条

[1] Erratum: Electrically tuned spin–orbit interaction in an InAs self-assembled quantum dot
Y. Kanai
R. S. Deacon
S. Takahashi
A. Oiwa
K. Yoshida
K. Shibata
K. Hirakawa
Y. Tokura
S. Tarucha
Nature Nanotechnology, 2012, 7 (1) : 75 - 75
[2] Electrically tuned spin-orbit interaction in an InAs self-assembled quantum dot
Kanai, Y.
Deacon, R. S.
Takahashi, S.
Oiwa, A.
Yoshida, K.
Shibata, K.
Hirakawa, K.
Tokura, Y.
Tarucha, S.
NATURE NANOTECHNOLOGY, 2011, 6 (08) : 511 - 516
[3] Electrically tuned spin-orbit interaction in an InAs self-assembled quantum dot
Kanai Y.
Deacon R.S.
Takahashi S.
Oiwa A.
Yoshida K.
Shibata K.
Hirakawa K.
Tokura Y.
Tarucha S.
Nature Nanotechnology, 2011, 6 (8) : 511 - 516
[4] Electrically tuned spin-orbit interaction in an InAs self-assembled quantum dot (vol 6, pg 511, 2011)
Kanai, Y.
Deacon, R. S.
Takahashi, S.
Oiwa, A.
Yoshida, K.
Shibata, K.
Hirakawa, K.
Tokura, Y.
Tarucha, S.
NATURE NANOTECHNOLOGY, 2012, 7 (01) : 75 - 75
[5] Intermixing in self-assembled InAs quantum dot formation
Heyn, C
Bolz, A
Maltezopoulos, T
Johnson, RL
Hansen, W
JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 46 - 50
[6] Electrically addressing a single self-assembled quantum dot
Ellis, DJP
Bennett, AJ
Shields, AJ
Atkinson, P
Ritchie, DA
APPLIED PHYSICS LETTERS, 2006, 88 (13)
[7] Self-assembled InAs/GaAs quantum dots and quantum dot laser
Wang, ZG
Liu, FQ
Liang, JB
Xu, B
SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY, 2000, 43 (08): : 861 - 870
[8] Self-assembled InAs/GaAs quantum dots and quantum dot laser
王占国
刘峰奇
梁基本
徐波
Science China Mathematics, 2000, (08) : 861 - 870
[9] Self-assembled InAs/GaAs quantum dots and quantum dot laser
Zhanguo Wang
Fengqi Liu
Jiben Liang
Bo Xu
Science in China Series A: Mathematics, 2000, 43 : 861 - 870
[10] Self-assembled InAs/GaAs quantum dots and quantum dot laser
王占国
刘峰奇
梁基本
徐波
ScienceinChina,SerA., 2000, Ser.A.2000 (08) : 861 - 870

← 1 2 3 4 5 →