Electrically tuned g tensor in an InAs self-assembled quantum dot

被引：31

作者：

Deacon, R. S. ^{[1
,2
]}

Kanai, Y. ^{[1
]}

Takahashi, S. ^{[1
]}

Oiwa, A. ^{[1
,2
]}

Yoshida, K. ^{[1
]}

Shibata, K. ^{[3
]}

Hirakawa, K. ^{[2
,3
,4
]}

Tokura, Y. ^{[5
]}

Tarucha, S. ^{[1
,4
]}

机构：

[1] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

[2] JST CREST, Kawaguchi, Saitama 3320012, Japan

[3] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[4] Univ Tokyo, INQIE, Meguro Ku, Tokyo 1538505, Japan

[5] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

PHYSICAL REVIEW B | 2011年 / 84卷 / 04期

关键词：

SINGLE-ELECTRON SPIN; MANIPULATION;

D O I：

10.1103/PhysRevB.84.041302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the all-electrical tuning of the Lande g tensor in a single uncapped InAs quantum dot contacted with a nanogap electrode technique and electrically gated with both back-and side-gate electrodes. Magnetotransport measurements allow extraction of the g tensor components from measurements of the Zeeman energy for magnetic fields applied in the plane of the sample. The side-gate electrode allows tuning of the anisotropy of the in-plane g tensor components and is suitable for the manipulation of the quantum-dot spin states using g factor modulation resonance schemes.

引用

页数：5

共 29 条

[1] Lande g tensor in semiconductor nanostructures [J].

Alegre, T. P. Mayer ;

Hernandez, F. G. G. ;

Pereira, A. L. C. ;

Medeiros-Ribeiro, G. .

PHYSICAL REVIEW LETTERS, 2006, 97 (23)

[2] Tunable effective g factor in InAs nanowire quantum dots -: art. no. 201307 [J].

Björk, MT ;

Fuhrer, A ;

Hansen, AE ;

Larsson, MW ;

Fröberg, LE ;

Samuelson, L .

PHYSICAL REVIEW B, 2005, 72 (20)

[3] Giant Fluctuations and Gate Control of the g-Factor in InAs Nanowire Quantum Dots [J].

Csonka, S. ;

Hofstetter, L. ;

Freitag, F. ;

Oberholzer, S. ;

Schoenenberger, C. ;

Jespersen, T. S. ;

Aagesen, M. ;

Nygard, J. .

NANO LETTERS, 2008, 8 (11) :3932-3935

[4] Quantum computers and quantum coherence [J].

DiVincenzo, DP ;

Loss, D .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1999, 200 (1-3) :202-218

[5] Composition profiling of InAs quantum dots and wetting layers by atom probe tomography and cross-sectional scanning tunneling microscopy [J].

Giddings, A. D. ;

Keizer, J. G. ;

Hara, M. ;

Hamhuis, G. J. ;

Yuasa, H. ;

Fukuzawa, H. ;

Koenraad, P. M. .

PHYSICAL REVIEW B, 2011, 83 (20)

[6] Shell structures in self-assembled InAs quantum dots probed by lateral electron tunneling structures [J].

Jung, M ;

Machida, T ;

Hirakawa, K ;

Komiyama, S ;

Nakaoka, T ;

Ishida, S ;

Arakawa, Y .

APPLIED PHYSICS LETTERS, 2005, 87 (20) :1-3

[7] Lateral electron transport through single self-assembled InAs quantum dots [J].

Jung, M ;

Hirakawa, K ;

Kawaguchi, Y ;

Komiyama, S ;

Ishida, S ;

Arakawa, Y .

APPLIED PHYSICS LETTERS, 2005, 86 (03) :1-3

[8] Electrical control of Kondo effect and superconducting transport in a side-gated InAs quantum dot Josephson junction [J].

Kanai, Y. ;

Deacon, R. S. ;

Oiwa, A. ;

Yoshida, K. ;

Shibata, K. ;

Hirakawa, K. ;

Tarucha, S. .

PHYSICAL REVIEW B, 2010, 82 (05)

[9]

KANAI Y, NATURE NANO IN PRESS

[10] Gigahertz electron spin manipulation using voltage-controlled g-tensor modulation [J].

Kato, Y ;

Myers, RC ;

Driscoll, DC ;

Gossard, AC ;

Levy, J ;

Awschalom, DD .

SCIENCE, 2003, 299 (5610) :1201-1204

← 1 2 3 →