Cu wettability and diffusion barrier property of Ru thin film for Cu metallization

被引:136
|
作者
Kim, H [1 ]
Koseki, T
Ohba, T
Ohta, T
Kojima, Y
Sato, H
Shimogaki, Y
机构
[1] Univ Tokyo, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan
[2] Univ Tokyo, Div Univ Corp Relat, Bunkyo Ku, Tokyo 1138654, Japan
[3] Tokyo Electron AT Ltd, Technol Dev Ctr, Nirasaki City, Yamanashi 4070192, Japan
关键词
D O I
10.1149/1.1939353
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The main issue of Cu metallization is the electromigration of Cu through the interface between Cu and the barrier or capping layer. To improve electromigration resistance at the Cu and barrier metal interface, insertion of a glue layer which enhances the adhesion of Cu onto the under layer may be effective. The wettability of Cu on Ru and Ta glue layers was evaluated as the index of Cu adhesion strength onto glue layers. The wetting angle of Cu (43 degrees) on a Ru substrate was three times lower than that of Cu (123 degrees) on a Ta substrate after annealing. Lower wetting angle of Cu on a Ru substrate indicates a good adhesion property between Cu and Ru and may imply a high electromigration resistance. The better Cu wettability of Ru compared to Ta can be explained by the concept of lattice misfit. A Ru(002) plane has lower lattice misfit, which suggests lower interface energy, and enhanced the adhesion of Cu onto Ru. However, the Ru film showed poor Cu diffusion barrier properties, which suggests Ru should be used as a glue layer in combination with another barrier layer. (c) 2005 The Electrochemical Society. All rights reserved.
引用
收藏
页码:G594 / G600
页数:7
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