Cu wettability and diffusion barrier property of Ru thin film for Cu metallization

被引:136
|
作者
Kim, H [1 ]
Koseki, T
Ohba, T
Ohta, T
Kojima, Y
Sato, H
Shimogaki, Y
机构
[1] Univ Tokyo, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan
[2] Univ Tokyo, Div Univ Corp Relat, Bunkyo Ku, Tokyo 1138654, Japan
[3] Tokyo Electron AT Ltd, Technol Dev Ctr, Nirasaki City, Yamanashi 4070192, Japan
关键词
D O I
10.1149/1.1939353
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The main issue of Cu metallization is the electromigration of Cu through the interface between Cu and the barrier or capping layer. To improve electromigration resistance at the Cu and barrier metal interface, insertion of a glue layer which enhances the adhesion of Cu onto the under layer may be effective. The wettability of Cu on Ru and Ta glue layers was evaluated as the index of Cu adhesion strength onto glue layers. The wetting angle of Cu (43 degrees) on a Ru substrate was three times lower than that of Cu (123 degrees) on a Ta substrate after annealing. Lower wetting angle of Cu on a Ru substrate indicates a good adhesion property between Cu and Ru and may imply a high electromigration resistance. The better Cu wettability of Ru compared to Ta can be explained by the concept of lattice misfit. A Ru(002) plane has lower lattice misfit, which suggests lower interface energy, and enhanced the adhesion of Cu onto Ru. However, the Ru film showed poor Cu diffusion barrier properties, which suggests Ru should be used as a glue layer in combination with another barrier layer. (c) 2005 The Electrochemical Society. All rights reserved.
引用
收藏
页码:G594 / G600
页数:7
相关论文
共 50 条
  • [21] Characteristics of Thermally Robust 5 nm Ru-C Diffusion Barrier/Cu Seed Layer in Cu Metallization
    Chen, Chun-Wei
    Chen, J. S.
    Jeng, Jiann-Shing
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (09) : H724 - H728
  • [22] Performance Improved by Incorporating of Ru Atoms into Zr-Si Diffusion Barrier for Cu Metallization
    Wang Ying
    Song Zhong-Xiao
    Zhang Mi-Lin
    CHINESE PHYSICS LETTERS, 2012, 29 (09)
  • [23] Organosiloxane nanolayer as diffusion barrier for Cu metallization on Si
    Zhang, Yan-Ping
    Sil, Manik Chandra
    Chen, Chih-Ming
    APPLIED SURFACE SCIENCE, 2021, 567 (567)
  • [24] Characterization of tungsten carbide as diffusion barrier for Cu metallization
    Wang, SJ
    Tsai, HY
    Sun, SC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (4B): : 2642 - 2649
  • [25] Ge/HfNx diffusion barrier for Cu metallization on Si
    Rawal, S.
    Norton, D. P.
    Kim, KeeChan
    Anderson, T. J.
    McElwee-White, L.
    APPLIED PHYSICS LETTERS, 2006, 89 (23)
  • [26] Electroless deposition of NiCrB diffusion barrier layer film for ULSI-Cu metallization
    Wang, Yuechun
    Chen, Xiuhua
    Ma, Wenhui
    Shang, Yudong
    Lei, Zhengtao
    Xiang, Fuwei
    APPLIED SURFACE SCIENCE, 2017, 396 : 333 - 338
  • [27] Effect of film microstructure on diffusion barrier properties of TaN x films in Cu metallization
    Kim, Sung-Man
    Lee, Gi-Rak
    Lee, Jung-Joong
    1600, Japan Society of Applied Physics (47): : 6953 - 6955
  • [28] Characterization of tungsten carbide as diffusion barrier for Cu metallization
    Wang, Shui Jinn
    Tsai, Hao Yi
    Sun, Shi Chung
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (4 B): : 2642 - 2649
  • [29] Investigation of Zr-N thin films for use as diffusion barrier in Cu metallization
    Wang, Ying
    Cao, Fei
    Ding, Minghui
    Yang, Dawei
    MICROELECTRONICS JOURNAL, 2007, 38 (8-9) : 910 - 914
  • [30] Thermal and Electrical Properties of PVD Ru(P) Film as Cu Diffusion Barrier
    Perng, Dung-Ching
    Hsu, Kuo-Chung
    Tsai, Shuo-Wen
    Yeh, Jia-Bin
    MICROELECTRONIC ENGINEERING, 2010, 87 (03) : 365 - 369