Structural, Magnetic, and Optical Properties of Mn2+ Doping in ZnO Thin Films

被引:18
作者
Sharma, Monika [1 ]
Bera, Kakoli [1 ]
Mishra, Ruby [2 ]
Kuanr, Alka V. [3 ]
机构
[1] Univ Delhi, Deshbandhu Coll, Dept Phys, New Delhi 110019, India
[2] Univ Delhi, Deshbandhu Coll, Dept Chem, New Delhi 110019, India
[3] Univ Delhi, Shaheed Rajguru Coll Appl Sci Women, Jhilmil Colony, New Delhi 110096, India
关键词
ZnO; thin films; magnetic properties; energy band-gap; SOL-GEL; ROOM-TEMPERATURE; FERROMAGNETISM;
D O I
10.3390/surfaces4040022
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
MnxZn1-xO thin films (x = 0%, 1%, 3%, and 5%) were grown on corning glass substrates using sol-gel technique. Single-phase hexagonal wurtzite structure was confirmed using X-ray diffraction. Raman analysis revealed the presence of Mn content with an additional vibrational mode at 570 cm(-1). The surface morphology of the samples was observed by scanning electron microscopy which suggested that the grain size increases with an increase in Mn concentration. The optical bandgap increases with increasing Mn concentration due to a significant blueshift in UV-visible absorption spectra. The alteration of the bandgap was verified by the I-V measurements on ZnO and Mn-ZnO films. The various functional groups in the thin films were recorded using FTIR analysis. Magnetic measurements showed that MnxZn1-xO films are ferromagnetic, as Mn induces a fully polarised state. The effect of Mn2+ ions doping on MnxZn1-xO thin films was investigated by extracting various parameters such as lattice parameters, energy bandgap, resistivity, and magnetisation. The observed coercivity is about one-fifth of the earlier published work data which indicates the structure is soft in nature, having less dielectric/magnetic loss, and hence can be used as ultra-fast switching in spintronic devices.
引用
收藏
页码:268 / 278
页数:11
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