20.3dB 0.39mW AM Detector with Single-Transistor Active Inductor in Bendable a-IGZO TFT

被引：0

作者：

Meister, Tilo ^{[1
]}

Ishida, Koichi ^{[1
]}

Shabanpour, Reza ^{[1
]}

Boroujeni, Bahman K. ^{[1
]}

Carta, Corrado ^{[1
]}

Munzenrieder, Niko ^{[2
,3
]}

Petti, Luisa ^{[2
]}

Cantarella, Giuseppe ^{[2
]}

Salvatore, Giovanni A. ^{[2
]}

Troster, Gerhard ^{[2
]}

Ellinger, Frank ^{[1
]}

机构：

[1] Tech Univ Dresden, Fac Elect & Comp Engn, Dresden, Germany

[2] Swiss Fed Inst Technol Zurich, Elect Lab, Zurich, Switzerland

[3] Univ Sussex, Sch Engn & Informat, Sensor Technol Res Ctr, Brighton BN1 9RH, E Sussex, England

来源：

ESSCIRC CONFERENCE 2016 | 2016年

关键词：

flexible electronics; radio receivers; amplifiers; active inductors; thin film transistors; TFT; amplitude modulation; a-IGZO; InGaZnO;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an AM detector circuit in a bendable a-IGZO TFT technology. The circuit is based on a common-source stage loaded with a single-ended active inductor, which uses only one active transistor. This active inductor is the key element for the achieved circuit performance. The detector circuit consumes only 0.39 mW, which is almost a tenfold improvement over previous works in the same technology and crucial for mobile and wearable applications. At the same time it has the smallest chip area. The detector provides a conversion gain of 20.3 dB and an RF -3dB-bandwidth of around 7.5 MHz. At fc=13.56 MHz it has 11.6 dB gain, which also allows its use in this unlicensed ISM radio band for RFID and smart label applications.

引用

页码：79 / 82

页数：4

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