Stochastic Spiking Neural Networks Enabled by Magnetic Tunnel Junctions: From Nontelegraphic to Telegraphic Switching Regimes

被引:57
作者
Liyanagedera, Chamika M. [1 ]
Sengupta, Abhronil [1 ]
Jaiswal, Akhilesh [1 ]
Roy, Kaushik [1 ]
机构
[1] Purdue Univ, W Lafayette, IN 47906 USA
来源
PHYSICAL REVIEW APPLIED | 2017年 / 8卷 / 06期
基金
美国国家科学基金会;
关键词
SPIN-TRANSFER TORQUE; NEUROMORPHIC SYSTEMS; SYNAPSE;
D O I
10.1103/PhysRevApplied.8.064017
中图分类号
O59 [应用物理学];
学科分类号
摘要
Stochastic spiking neural networks based on nanoelectronic spin devices can be a possible pathway to achieving "brainlike" compact and energy-efficient cognitive intelligence. The computational model attempt to exploit the intrinsic device stochasticity of nanoelectronic synaptic or neural components to perform learning or inference. However, there has been limited analysis on the scaling effect of stochastic spin devices and its impact on the operation of such stochastic networks at the system level. This work attempts to explore the design space and analyze the performance of nanomagnet-based stochastic neuromorphic computing architectures for magnets with different barrier heights. We illustrate how the underlying network architecture must be modified to account for the random telegraphic switching behavior displayed by magnets with low barrier heights as they are scaled into the superparamagnetic regime. We perform a device-to-system-level analysis on a deep neural-network architecture for a digit-recognition problem on the MNIST data set.
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页数:13
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