Controllable synthesis of high quality monolayer WS2 on a SiO2/Si substrate by chemical vapor deposition

被引：66
作者：
Fu, Qi [1 ]
Wang, Wenhui [1 ]
Yang, Lei [1 ]
Huang, Jian [1 ]
Zhang, Jingyu [3 ]
Xiang, Bin [1 ,2 ]
机构：
[1] Univ Sci & Technol China, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, Hefei 230026, Anhui, Peoples R China
[2] Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Anhui, Peoples R China
[3] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Mol Foundry, Berkeley, CA 94720 USA
来源：
RSC ADVANCES | 2015年 / 5卷 / 21期
基金：
中国国家自然科学基金;
关键词：
LARGE-AREA; MOS2; GROWTH; LAYERS; GRAPHENE; NANOSHEETS; DISULFIDE;
D O I：
10.1039/c5ra00210a
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Tungsten disulfide (WS2), with its transformation from indirect to direct band transitions when scaled down to a monolayer, exhibits great potential for future micro-device applications. In this work, we report a controllable route for monolayer WS2 synthesis. The high-quality of as-grown monolayer WS2 was confirmed by optical microscopy, atomic force microscopy (AFM), high resolution scanning transmission electron microscopy (HRSTEM), Raman spectroscopy, and photoluminescence (PL). The impact of growth parameters (including gas flow rate and reaction temperature) on the morphology of the WS2 domain was investigated. A growth mechanism is proposed based on the experimental analysis. Our results also provide some general guidelines for other two dimensional (2D) monolayer syntheses of transition metal dichalcogenides (TMD).
引用
收藏
页码：15795 / 15799
页数：5
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