Effect of charge trap layer thickness on the charge spreading behavior within a few seconds in 3D charge trap flash memory

被引：10

作者：

Choi, Bongsik ^{[1
]}

Lee, Jiyong ^{[2
]}

Yoon, Jinsu ^{[1
]}

Jeon, Minsu ^{[1
]}

Lee, Yongwoo ^{[1
]}

Han, Jungmin ^{[1
]}

Lee, Jieun ^{[1
]}

Park, Jinhee ^{[1
]}

Kim, Yeamin ^{[1
]}

Kim, Dong Myong ^{[1
]}

Kim, Dae Hwan ^{[1
]}

Chung, Sungyong ^{[2
]}

Lime, Chan ^{[2
]}

Choi, Sung-Jin ^{[1
]}

机构：

[1] Kookmin Univ, Sch Elect Engn, Seoul 02707, South Korea

[2] SK Hynix Semicond Inc, Res & Dev Div, Icheon 17336, Gyeongki, South Korea

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2018年 / 33卷 / 10期

基金：

新加坡国家研究基金会;

关键词：

3D NAND; charge trap memory; charge loss; retention; SONOS; charge spreading;

D O I：

10.1088/1361-6641/aade29

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Charge spreading behavior within a few seconds, referred to as early retention, was comprehensively investigated in 24 word-line stacked tube-type 3D NAND flash memory. We thoroughly explored the charge spreading behavior from the perspectives of both electron and hole spreading in 3D NAND flash memory with different charge trap layer thicknesses at various programming and erasing levels for solid and checkerboard patterns to provide guidelines for minimizing and optimizing the charge spreading.

引用

页数：4

共 15 条

[1]

[Anonymous], IEEE ELECT DEVICE LE

[2]

[Anonymous], P VLSI S TECHN

[3]

[Anonymous], 2012, IEDM

[4]

[Anonymous], IEDM

[5] Lateral redistribution of trapped charges in nitride/oxide/Si (NOS) investigated by electrostatic force microscopy [J].

Baik, Seung Jae ;

Lim, Koeng Su ;

Choi, Wonsup ;

Yoo, Hyunjun ;

Lee, Jang-Sik ;

Shin, Hyunjung .

NANOSCALE, 2011, 3 (06) :2560-2565

[6]

Choi E.-S., 2012, 2012 International Electron Devices Meeting, p9.4.1, DOI DOI 10.1109/IEDM.2012.6479011

[7] Effects of lateral charge spreading on the reliability of TANOS (TaN/AlO/SiN/Oxide/Si) NAND Flash memory [J].

Kang, Changseok ;

Choi, Jungdal ;

Sim, Jaesung ;

Lee, Changhyun ;

Shin, Yoocheol ;

Park, Jintaek ;

Sel, Jongsun ;

Jeon, Sanghun ;

Park, Youngwoo ;

Kim, Kinam .

2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL, 2007, :167-+

[8]

Kim K, 2005, 2005 IEEE Intelligent Transportation Systems Conference (ITSC), P332

[9]

Kim K, 2007, INT EL DEVICES MEET, P27

[10] White-light electroluminescence from ZnO nanowires/polyfluorene heterojunction diodes [J].

Lee, Chun-Yu ;

Huang, Jing-Shun ;

Hui, Sheng-Hao ;

Su, Wei-Fang ;

Lin, Ching-Fuh .

2008 IEEE/LEOS INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS, 2008, :118-+

← 1 2 →